參數(shù)資料
型號(hào): ICS722MT
英文描述: LOW COST 27 MHZ 3.3 VOLT VCXO
中文描述: 低成本27兆赫壓控電壓為3.3伏
文件頁數(shù): 5/6頁
文件大?。?/td> 99K
代理商: ICS722MT
L
OW
C
OST
27 MH
Z
3.3 V
OLT
VCXO
MDS 722 A
5
Revision 121404
Integrated Circuit Systems
525 Race Street, San Jose, CA 95126
tel (408) 297-1201
www.icst.com
ICS722
AC Electrical Characteristics
VDD = 3.3 V ±5%
, Ambient Temperature 0 to +70
°
C, unless stated otherwise
Parameter
Symbol
Output Frequency
F
O
Crystal Pullability
F
P
0V< VIN < 3.3 V, Note 1
VCXO Gain
VIN = VDD/2 + 1 V, Note 1
Output Rise Time
t
OR
0.8 to 2.0 V, C
L
=15 pF
Output Fall Time
t
OF
2.0 to 0.8 V, C
L
=15 pF
Output Clock Duty
Cycle
Maximum Output
Jitter, short term
Note 1: External crystal device must conform with Pullable Crystal Specifications listed on page 3.
Thermal Characteristics
Marking Diagram (ICS722M)
Marking Diagram (ICS722MLF)
Notes:
1. ###### is the lot number.
2. YYWW is the last two digits of the year and week that the part was assembled.
3. “LF” denotes Pb (lead) free package.
4. Bottom marking: (origin)
Origin = country of origin if not USA.
Conditions
Min.
16.2
+ 115
Typ.
Max.
28
Units
MHz
ppm
ppm/V
ns
ns
%
120
1.5
1.5
60
t
D
Measured at 1.4 V, C
L
=15 pF
40
50
t
J
C
L
=15 pF
110
ps
Parameter
Symbol
θ
JA
θ
JA
θ
JA
θ
JC
Conditions
Still air
1 m/s air flow
3 m/s air flow
Min.
Typ.
150
140
120
40
Max.
Units
°
C/W
°
C/W
°
C/W
°
C/W
Thermal Resistance Junction to
Ambient
Thermal Resistance Junction to Case
ICS722M
######
YYWW
1
4
5
8
722MLF
######
YYWW
1
4
5
8
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