參數資料
型號: ICS841S012DKILFT
廠商: IDT, Integrated Device Technology Inc
文件頁數: 20/23頁
文件大?。?/td> 0K
描述: IC FREQ SYNTHESIZER 56VFQFN
標準包裝: 1,000
系列: HiPerClockS™, PCI Express® (PCIe)
類型: 時鐘/頻率合成器,多路復用器
PLL:
主要目的: PCI Express(PCIe)
輸入: LVCMOS,LVTTL,晶體
輸出: HCSL,LVCMOS,LVTTL
電路數: 1
比率 - 輸入:輸出: 2:12
差分 - 輸入:輸出: 是/無
頻率 - 最大: 250MHz
電源電壓: 3.135 V ~ 3.465 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 56-VFQFN 裸露焊盤
供應商設備封裝: 56-VFQFP-EP(8x8)
包裝: 帶卷 (TR)
ICS841S012BKI REVISION A NOVEMBER 10, 2009
6
2009 Integrated Device Technology, Inc.
ICS841S012I Data Sheet
CRYSTAL-TO-0.7V DIFFERENTIAL HCSL/LVCMOS FREQUENCY SYNTHESIZER
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V
DD
4.6V
Inputs, V
I
-0.5V to V
DD + 0.5 V
Outputs, V
O
-0.5V to V
DDO + 0.5V
Package Thermal Impedance,
θ
JA
31.4°C/W (0 mps)
Storage Temperature, T
STG
-65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause per manent damage to the
device. These ratings are stress specifications only. Functional op-
eration of product at these conditions or any conditions beyond
those listed in the
DC Characteristics or AC Characteristics is not
implied. Exposure to absolute maximum rating conditions for ex-
tended periods may affect product reliability.
TABLE 4A. POWER SUPPLY DC CHARACTERISTICS, V
DD = VDDOB = VDDOC = 3.3V±5%, T
A
= -40°C TO 85°C
TABLE 4B. LVCMOS/LVTTL DC CHARACTERISTICS, V
DD = VDDOB = VDDOC = 3.3V±5%, T
A
= -40°C TO 85°C
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TABLE 5. CRYSTAL CHARACTERISTICS
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ICS841S012I 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:Crystal-to-0.7V Differential HCSL/LVCMOS Frequency Synthesizer
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