參數(shù)資料
型號(hào)： IDT49FCT805ASOB
廠商： Integrated Device Technology, Inc.
英文描述： FAST CMOS BUFFER/CLOCK DRIVER
中文描述： 快速CMOS緩沖器/時(shí)鐘驅(qū)動(dòng)器
文件頁(yè)數(shù)： 3/7頁(yè)
文件大?。?/td> 126K
代理商： IDT49FCT805ASOB
IDT49FCT805/806/A
FAST CMOS BUFFER/CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
9.1
3
ABSOLUTE MAXIMUM RATINGS
(1)
CAPACITANCE
(T
A
= +25
°
C, f = 1.0MHz)
Symbol
Parameter
(1)
C
IN
Input
Capacitance
C
OUT
Output
Capacitance
NOTE:
1. This parameter is measured at characterization but not tested.
2574 lnk 04
Conditions
V
IN
= 0V
Typ.
4.5
Max.
6.0
Unit
pF
V
OUT
= 0V
5.5
8.0
pF
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: V
LC
= 0.2V; V
HC
= V
CC
– 0.2V
Commercial: T
A
= 0
°
C to +70
°
C, V
CC
= 5.0V
±
5%; Military: T
A
= –55
°
C to +125
°
C, V
CC
= 5.0V
±
10%
Symbol
Parameter
V
IH
Input HIGH Level
Guaranteed Logic HIGH Level
V
IL
Input LOW Level
Guaranteed Logic LOW Level
I
I H
Input HIGH Current
(5)
V
CC
= Max.
Input LOW Current
(5)
V
CC
= Max.
I
OZH
Off State (HIGH Z)
(5)
V
CC
= Max.
I
OZL
Output Current
(5)
V
IK
Clamp Diode Voltage
V
CC
= Min., I
IN
= –18mA
V
CC
= Max.
(3)
, V
O
= GND
V
OH
Output HIGH Voltage
V
CC
= 3V, V
IN
= V
LC
or V
HC,
I
OH
= –32
μ
A
V
CC
= Min.
Test Conditions
(1)
Min.
2.0
—
—
Typ.
(2)
—
—
—
Max.
—
0.8
±
1
±
1
±
1
±
1
–1.2
Unit
V
V
μ
A
μ
A
μ
A
μ
A
V
V
I
= V
CC
I
I L
V
I
=
GND
V
O
=
V
CC
V
O
=
GND
—
—
—
—
—
—
—
–0.7
I
OS
Short Circuit Current
–60
V
HC
V
HC
–120
V
CC
V
CC
—
—
—
mA
V
I
OH
= –300
μ
A
I
OH
= –12mA MIL.
I
OH
= –15mA COM'L.
I
OH
= -24mA MIL.
I
OH
= -24mA COM'L.
V
IN
= V
IH
or V
IL
3.6
4.3
—
2.4
3.8
—
V
OL
Output LOW Voltage
V
CC
= 3V, V
IN
= V
LC
or V
HC,
I
OL
= 300
μ
A
V
CC
= Min.
V
IN
= V
IH
or V
IL
—
—
—
GND
GND
0.3
V
LC
V
LC(4)
0.55
V
I
OH
= 300
μ
A
I
OL
= 48mA MIL.
I
OL
= 64mA COM'L.
—
V
H
Input Hysteresis for all inputs
Quiescent Power Supply Current
—
—
200
5
—
500
mV
μ
A
I
CC
V
CC
= Max., V
IN
= GND or V
CC
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25
°
C ambient.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. This parameter is guaranteed but not tested.
5. The test limit for this parameter is
±
5
μ
A at T
A
= –55
°
C.
2574 tbl 05
NOTE:
1. H = HIGH, L = LOW, Z = High Impedance
2574 tbl 02
FUNCTION TABLE
(1)
Outputs
Inputs
49FCT805
49FCT806
n
,
OB
n
H
OE
A
,
OE
B
IN
A
, IN
B
OA
n
, OB
n
L
L
MON
L
OA
MON
L
H
L
H
H
H
L
H
H
Z
Z
H
L
H
L
Z
Z
L
H
L
Symbol
V
TERM(2)
Terminal Voltage with Respect to
GND
V
TERM(3)
Terminal Voltage with Respect to
GND
T
STG
Storage Temperature
I
OUT
DC Output Current
Description
Max.
Unit
V
–0.5 to +7.0
–0.5 to
V
CC
+0.5
–65 to +150
–60 to +120
V
°
C
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is
not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability. No terminal voltage may exceed
V
CC
by +0.5V unless otherwise noted.
2. Input and V
CC
terminals.
3. Output and I/O terminals.
2574 lnk 03
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