參數(shù)資料
型號(hào)： IDT54FCT16H501ETEB
廠商： Integrated Device Technology, Inc.
英文描述： FAST CMOS 18-BIT REGISTERED TRANSCEIVER
中文描述： 快速CMOS 18位注冊(cè)收發(fā)器
文件頁數(shù)： 6/9頁
文件大?。?/td> 140K
代理商： IDT54FCT16H501ETEB
5.10
6
IDT54/74FCT16501AT/CT/ET, 162501AT/CT/ET, 162H501AT/CT/ET
FAST CMOS 18-BIT REGISTERED TRANSCEIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25
°
C ambient.
3. Per TTL driven input (V
IN
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
I
CC
D
H
N
T
+ I
CCD
(f
CP
N
CP
/2 + f
i
N
i
)
I
CC
= Quiescent Current (I
CCL
,
I
CCH
and I
CCZ
)
I
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
N
CP
= Number of Clock Inputs at f
CP
f
i
= Input Frequency
N
i
= Number of Inputs at f
i
POWER SUPPLY CHARACTERISTICS
Symbol
I
CC
Parameter
Test Conditions
(1)
Min.
—
Typ.
(2)
0.5
Max.
1.5
Unit
mA
Quiescent Power Supply
Current TTL Inputs HIGH
Dynamic Power Supply Current
(4)
V
CC
= Max.
V
IN
= 3.4V
(3)
V
CC
= Max., Outputs Open
OEAB =
OEBA
= V
CC
or GND V
IN
= GND
One Input Toggling
50% Duty Cycle
V
CC
= Max., Outputs Open
f
CP
= 10MHz (CLKAB)
50% Duty Cycle
OEAB =
OEBA
= V
CC
LEAB = GND
One Bit Toggling
f
i
=
5MHz
50% Duty Cycle
V
CC
= Max., Outputs Open
f
CP
= 10MHz (CLKAB)
50% Duty Cycle
OEAB =
OEBA
= V
CC
LEAB = GND
Eighteen Bits Toggling
f
i
=
2.5MHz
50% Duty Cycle
I
CCD
V
IN
= V
CC
—
75
120
μ
A/
MHz
I
C
Total Power Supply Current
(6)
V
IN
= V
CC
V
IN
= GND
—
0.8
1.7
mA
V
IN
= 3.4V
V
IN
= GND
—
1.3
3.2
V
IN
= V
CC
V
IN
= GND
—
3.8
6.5
(5)
V
IN
= 3.4V
V
IN
= GND
—
8.5
20.8
(5)
2547 tbl 09
相關(guān)PDF資料
PDF描述
IDT54FCT16H501ETPA FAST CMOS 18-BIT REGISTERED TRANSCEIVER
IDT54FCT16H501ETPAB Ceramic Chip Capacitors / Standard X7R; Capacitance [nom]: 3.3uF; Working Voltage (Vdc)[max]: 16V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R; Lead Style: Surface Mount Chip; Lead Dimensions: 1206; Termination: Tin Plated Nickel Barrier; Body Dimensions: 0.126" x 0.063"; Container: Bulk; Features: Unmarked
IDT54FCT16H501ETPF FAST CMOS 18-BIT REGISTERED TRANSCEIVER
IDT54FCT16H501ETPFB FAST CMOS 18-BIT REGISTERED TRANSCEIVER
IDT54FCT16H501ETPV Ceramic Chip Capacitors / Standard X7R; Capacitance [nom]: 3.3uF; Working Voltage (Vdc)[max]: 10V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R; Lead Style: Surface Mount Chip; Lead Dimensions: 1206; Termination: Tin Plated Nickel Barrier; Body Dimensions: 0.126" x 0.063"; Container: Bulk; Features: Unmarked
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