參數資料
型號： IDT54FCT237ATQ
廠商： Integrated Device Technology, Inc.
英文描述： FAST CMOS OCTAL TRANSPARENT LATCHES
中文描述： 快速CMOS八路透明鎖存
文件頁數： 5/8頁
文件大?。?/td> 182K
代理商： IDT54FCT237ATQ
IDT54/74FCT373T/AT/CT/DT - 2373T/AT/CT, IDT54/74FCT533T/AT/CT, IDT54/74FCT573T/AT/CT/DT - 2573T/AT/CT
FAST CMOS OCTAL TRANSPARENT LATCHES
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.12
5
POWER SUPPLY CHARACTERISTICS
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25
°
C ambient.
3. Per TTL driven input (V
IN
= 3.4V). All other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
I
CC
D
H
N
T
+ I
CCD
(f
CP/
2 + f
i
N
i
)
I
CC
= Quiescent Current
I
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
f
i
= Input Frequency
N
i
= Number of Inputs at f
i
All currents are in milliamps and all frequencies are in megahertz.
2564 tbl 09
Symbol
I
CC
Parameter
Test Conditions
(1)
Min.
—
Typ.
(2)
0.5
Max.
2.0
Unit
mA
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply
Current
(4)
V
CC
= Max.
V
IN
= 3.4V
(3)
V
CC
= Max.
Outputs Open
OE
= GND
One Input Toggling
50% Duty Cycle
V
CC
= Max.
Outputs Open
fi = 10MHz
50% Duty Cycle
OE
= GND
LE
=
V
CC
One Bit Toggling
V
CC
= Max.
I
CCD
V
IN
= V
CC
V
IN
= GND
FCTxxxT
—
0.15
0.25
mA/
MHz
FCT2xxxT
—
0.06
0.12
I
C
Total Power Supply Current
(6)
V
IN
= V
CC
V
IN
= GND FCT2xxxT
FCTxxxT
—
—
1.5
0.6
3.5
2.2
mA
V
IN
= 3.4
V
IN
= GND
FCTxxxT
—
1.8
4.5
FCT2xxxT
0.9
3.2
V
IN
= V
CC
FCTxxxT
—
3.0
6.0
(5)
3.4
(5)
Outputs Open
fi = 2.5MHz
50% Duty Cycle
OE
= GND
LE
=
V
CC
Eight Bits Toggling
V
IN
= GND FCT2xxxT
—
1.2
V
IN
= 3.4
V
IN
= GND
FCTxxxT
—
5.0
14.0
(5)
FCT2xxxT
—
3.2
11.4
(
5)
相關PDF資料
PDF描述
IDT54FCT237ATQB Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 0.1uF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-20%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 1812; Termination: 100% Tin (Sn); Body Dimensions: 0.180" x 0.125" x 0.080"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate
IDT54FCT237ATSO FAST CMOS OCTAL TRANSPARENT LATCHES
IDT54FCT237ATSOB FAST CMOS OCTAL TRANSPARENT LATCHES
IDT54FCT237CTD FAST CMOS OCTAL TRANSPARENT LATCHES
IDT54FCT237CTDB FAST CMOS OCTAL TRANSPARENT LATCHES
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