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參數(shù)資料
| 型號： | IDT54FCT3827BQ |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | 3.3V CMOS 10-BIT BUFFERS |
| 中文描述： | 3.3V的CMOS 10位緩沖器 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 102K |
| 代理商： | IDT54FCT3827BQ |
IDT54/74FCT3827A/B
3.3V CMOS OCTAL BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
8.15
4
POWER SUPPLY CHARACTERISTICS
NOTES:
1. For conditions shown as max. or min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 3.3V, +25
°
C ambient.
3. Per TTL driven input; all other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
I
CC
D
H
N
T
+ I
CCD
(f
CP
N
CP
/2 + fiNi)
I
CC
= Quiescent Current (I
CCL,
I
CCH
and
I
CCZ
)
I
CC
= Power Supply Current for a TTL High Input
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
N
CP
= Number of Clock Inputs at f
CP
f
i
= Input Frequency
N
i
= Number of Inputs at fi
3092 tbl 06
Symbol
I
CC
I
CCD
Parameter
Test Conditions
(1)
Min.
—
—
Typ.
(2)
2.0
60
Max.
30
85
Unit
μ
A
μ
A/
MHz
Quiescent Power Supply Current
Dynamic Power Supply Current
(4)
V
CC
= Max.
V
CC
= Max.
Outputs Open
OE
1
=
OE
2
= GND
One Input Toggling
50% Duty Cycle
V
CC
= Max.
Outputs Open
fi = 10MHz
50% Duty Cycle
OE
1
=
OE
2
= GND
One Bit Toggling
V
CC
= Max.
Outputs Open
fi = 2.5MHz
50% Duty Cycle
OE
1
=
OE
2
= GND
Ten Bits Toggling
V
IN
= V
CC
–0.6V
(3)
V
IN
= V
CC
V
IN
= GND
I
C
Total Power Supply Current
(6)
V
IN
= V
CC
V
IN
= GND
—
0.6
0.9
mA
V
IN
= V
CC
–0.6V
V
IN
= GND
—
0.6
0.9
V
IN
= V
CC
V
IN
= GND
—
1.5
2.1
(5)
V
IN
= V
CC
–0.6V
V
IN
= GND
—
1.5
2.3
(5)
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