參數(shù)資料
型號： IDT54FCT640CTSOB
廠商： Integrated Device Technology, Inc.
英文描述： Ceramic Chip Capacitors / Standard X7R; Capacitance [nom]: 10uF; Working Voltage (Vdc)[max]: 10V; Capacitance Tolerance: +/-20%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R; Lead Style: Surface Mount Chip; Lead Dimensions: 1210; Termination: Tin Plated Nickel Barrier; Body Dimensions: 0.126" x 0.098"; Container: Bulk; Features: Unmarked
中文描述： 快速CMOS八路雙向收發(fā)器
文件頁數(shù)： 3/8頁
文件大小： 157K
代理商： IDT54FCT640CTSOB
IDT54/74FCT245T/AT/CT/DT - 2245T/AT/CT, IDT54/74FCT640T/AT/CT, IDT54/74FCT645T/AT/CT/DT
FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.9
3
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Commercial: T
A
= 0
°
C to +70
°
C, V
CC
= 5.0V
±
5%; Military: T
A
= –55
°
C to +125
°
C, V
CC
= 5.0V
±
10%
Symbol
V
IH
Parameter
Test Conditions
(1)
Min.
2.0
Typ.
(2)
—
Max.
—
Unit
V
Input HIGH Level
Guaranteed Logic HIGH Level
V
IL
I
I H
I
I L
Input LOW Level
Input HIGH Current
(4)
Input LOW Current
(4)
Guaranteed Logic LOW Level
V
CC
= Max.
—
—
—
—
—
—
0.8
±
1
±
1
±
1
±
1
±
1
–1.2
—
1
V
μ
A
V
I
= 2.7V
V
I
= 0.5V
I
OZH
I
OZL
I
I
High Impedance Output Current
(3-State Output pins)
(4)
Input HIGH Current
(4)
V
CC
= Max.
V
O
= 2.7V
V
O
= 0.5V
—
—
—
—
—
—
μ
A
V
CC
= Max., V
I
= V
CC
(Max.)
μ
A
V
mV
mA
V
IK
V
H
I
CC
Clamp Diode Voltage
Input Hysteresis
Quiescent Power Supply Current
V
CC
= Min., I
IN
= –18mA
—
—
—
–0.7
200
0.01
—
V
CC
= Max., V
IN
= GND or V
CC
OUTPUT DRIVE CHARACTERISTICS FOR FCT245T/640T/645T
Symbol
V
OH
Parameter
Test Conditions
(1)
Min.
2.4
Typ.
(2)
3.3
Max.
—
Unit
V
Output HIGH Voltage
V
CC
= Min.
V
IN
= V
IH
or V
IL
I
OH
= –6mA MIL.
I
OH
= –8mA COM'L.
I
OH
= –12mA MIL.
I
OH
= –15mA COM'L.
I
OL
= 48mA MIL.
I
OL
= 64mA COM'L.
2.0
3.0
—
V
V
OL
Output LOW Voltage
V
CC
= Min.
V
IN
= V
IH
or V
IL
V
CC
= Max., V
O
= GND
(3)
—
0.3
0.55
V
I
OS
Short Circuit Current
–60
–120
–225
mA
OUTPUT DRIVE CHARACTERISTICS FOR FCT2245T
Symbol
I
ODL
Parameter
Test Conditions
(1)
Min.
16
Typ.
(2)
48
Max.
—
Unit
mA
Output LOW Current
V
CC
= 5V, V
IN
= V
IH
or
V
IL,
V
OUT
= 1.5V
(3)
V
CC
= 5V, V
IN
= V
IH
or V
IL,
V
OUT
= 1.5V
(3)
V
CC
= Min.
V
IN
= V
IH
or
V
IL
V
CC
= Min.
V
IN
= V
IH
or V
IL
I
ODH
V
OH
Output HIGH Current
Output HIGH Voltage
–16
2.4
–48
3.3
—
—
mA
V
I
OH
= –12mA MIL.
I
OH
= –15mA COM'L.
I
OL
= 12mA
V
OL
Output LOW Voltage
—
0.3
0.50
V
2539 lnk 05
2539 lnk 06
2539 lnk 07
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25
°
C ambient.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. The test limit for this parameter is
±
5
μ
A at T
A
= –55
°
C.
相關(guān)PDF資料
PDF描述
IDT54FCT640DTD FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS
IDT54FCT640DTDB FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS
IDT54FCT640DTE FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS
IDT54FCT640DTEB FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS
IDT54FCT640DTL FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT54FCT6446ADB 制造商:Integrated Device Technology Inc 功能描述:
IDT54FCT645CTDB 制造商:Integrated Device Technology Inc 功能描述:
IDT54FCT645DB 制造商:Integrated Device Technology Inc 功能描述:
IDT54FCT648ATLM 制造商:Integrated Device Technology Inc 功能描述:
IDT54FCT821ADB 制造商:Integrated Device Technology Inc 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*