參數(shù)資料
型號： IDT54FCT648TSO
廠商： Integrated Device Technology, Inc.
英文描述： FAST CMOS OCTAL TRANSCEIVER/ REGISTERS (3-STATE)
中文描述： 快速CMOS八端口收發(fā)器/寄存器（3態(tài)）
文件頁數(shù)： 5/9頁
文件大?。?/td> 189K
代理商： IDT54FCT648TSO
IDT54/74FCT646/2646/652/2652T/AT/CT/DT, 648T/AT/CT
FAST CMOS OCTAL TRANSCEIVER/REGISTER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.20
5
CAPACITANCE
(T
A
= +25
°
C, f = 1.0MHz)
Symbol
Parameter
(1)
C
IN
Input
Capacitance
C
OUT
Output
Capacitance
NOTE:
1. This parameter is measured at characterization but not tested.
ABSOLUTE MAXIMUM RATINGS
(1)
Conditions
V
IN
= 0V
Typ.
6
Max. Unit
10
pF
V
OUT
= 0V
8
12
pF
2634 lnk 05
Symbol
V
TERM(2)
Terminal Voltage with Respect to
GND
V
TERM(3)
Terminal Voltage with Respect to
GND
T
STG
Storage Temperature
I
OUT
DC Output Current
Description
Max.
Unit
V
–0.5 to +7.0
–0.5 to
V
CC
+0.5
–65 to +150
–60 to +120 mA
V
°
C
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is
not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability. No terminal voltage may exceed
V
CC
by +0.5V unless otherwise noted.
2. Input and V
CC
terminals only.
3. Outputs and I/O terminals only.
2634 lnk 04
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Commercial: T
A
= –40
°
C to +85
°
C, V
CC
= 5.0V
±
5%; Military: T
A
= –55
°
C to +125
°
C, V
CC
= 5.0V
±
10%
Symbol
Parameter
V
IH
Input HIGH Level
Guaranteed Logic HIGH Level
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Test Conditions
(1)
Min.
2.0
Typ.
(2)
—
Max.
—
Unit
V
V
IL
I
I H
I
I L
Input LOW Level
Input HIGH Current
(4)
Input LOW Current
(4)
Guaranteed Logic LOW Level
V
CC
= Max.
—
—
—
—
—
—
0.8
±
1
±
1
±
1
±
1
±
1
–1.2
—
1
V
μ
A
V
I
= 2.7V
V
I
= 0.5V
I
OZH
I
OZL
I
I
High Impedance Output Current
(3-State Output pins)
(4)
Input HIGH Current
(4)
V
CC
= Max.
V
O
= 2.7V
V
O
= 0.5V
—
—
—
—
—
—
μ
A
V
CC
= Max., V
I
= V
CC
(Max.)
μ
A
V
mV
mA
V
IK
V
H
I
CC
Clamp Diode Voltage
Input Hysteresis
Quiescent Power Supply Current
V
CC
= Min., I
IN
= –18mA
—
—
—
–0.7
200
0.01
—
V
CC
= Max., V
IN
= GND or V
CC
OUTPUT DRIVE CHARACTERISTICS FOR FCT646T/648T/652T
Symbol
Parameter
V
OH
Output HIGH Voltage
Test Conditions
(1)
Min.
2.4
Typ.
(2)
3.3
Max.
—
Unit
V
V
CC
= Min.
V
IN
= V
IH
or V
IL
I
OH
= –6mA MIL.
I
OH
= –8mA COM'L.
I
OH
= –12mA MIL.
I
OH
= –15mA COM'L.
I
OL
= 48mA MIL.
I
OL
= 64mA COM'L.
2.0
3.0
—
V
V
OL
Output LOW Voltage
V
CC
= Min.
V
IN
= V
IH
or V
IL
V
CC
= Max., V
O
= GND
(3)
V
CC
= 0V, V
IN
or V
O
≤
4.5V
—
0.3
0.55
V
I
OS
I
OFF
Short Circuit Current
Input/Output Power Off Leakage
(5)
–60
—
–120
—
–225
±
1
mA
μ
A
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相關(guān)PDF資料
PDF描述
IDT54FCT648TSOB Ceramic Chip Capacitors / Standard X7R; Capacitance [nom]: 3.3uF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-20%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R; Lead Style: Surface Mount Chip; Lead Dimensions: 1210; Termination: Tin Plated Nickel Barrier; Body Dimensions: 0.126" x 0.098"; Container: Bulk; Features: Unmarked
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