參數(shù)資料
型號： IDT54FCT807BTQ
廠商： Integrated Device Technology, Inc.
英文描述： FAST CMOS 1-TO-10 CLOCK DRIVER
中文描述： 快速CMOS 1至10時(shí)鐘驅(qū)動(dòng)器
文件頁數(shù)： 3/7頁
文件大?。?/td> 130K
代理商： IDT54FCT807BTQ
IDT54/74FCT807BT/CT
FAST CMOS 1-TO-10 CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
9.3
3
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified
Commercial: T
A
= 0
°
C to +70
°
C, V
CC
= 5.0V
±
5%; Military: T
A
= –55
°
C to +125
°
C, V
CC
= 5.0V
±
10%
Symbol
Parameter
V
IH
Input HIGH Level
Guaranteed Logic HIGH Level
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25
°
C ambient.
3. Not more than one output should be tested at one time. Duration of the test should not exceed one second.
4. Duration of the condition can not exceed one second.
5. The test limit for this parameter is
±
5
μ
A at T
A
= –55
°
C.
POWER SUPPLY CHARACTERISTICS
3017 lnk 04
Test Conditions
(1)
Min.
2.0
Typ.
(2)
—
Max.
—
Unit
V
V
IL
I
I H
I
I L
Input LOW Level
Input HIGH Current
(5)
Input LOW Current
(5)
Guaranteed Logic LOW Level
V
CC
= Max.
V
CC
= Max.
—
—
—
—
—
—
0.8
±
1
±
1
±
1
±
1
±
1
–1.2
–225
—
V
μ
A
μ
A
μ
A
μ
A
μ
A
V
mA
V
V
I
= 2.7V
V
I
= 0.5V
I
OZH
I
OZL
I
I
High Impedance Output Current
(3-State Output pins)
(5)
Input HIGH Current
(5)
V
CC
= Max.
V
O
= 2.7V
V
O
= 0.5V
—
—
—
—
—
—
V
CC
= Max., V
I
= V
CC
(Max.)
V
IK
I
OS
V
OH
Clamp Diode Voltage
Short Circuit Current
Output HIGH Voltage
V
CC
= Min., I
IN
= –18mA
V
CC
= Max.
(3)
, V
O
= GND
V
CC
= Min.
V
IN
= V
IH
or V
IL
—
–60
2.4
–0.7
–120
3.3
I
OH
= –12mA MIL.
I
OH
= –15mA COM'L.
I
OH
= –24mA MIL.
I
OH
= –32mA COM'L.
(4)
I
OL
= 32mA MIL.
I
OL
= 48mA COM'L.
2.0
3.0
—
V
OL
Output LOW Voltage
V
CC
= Min.
V
IN
= V
IH
or V
IL
V
CC
= 0V, V
IN
or V
O
≤
4.5V
—
0.3
0.55
V
I
OFF
Input/Output Power Off Leakage
(5)
Input Hysteresis for all inputs
—
—
—
150
±
1
—
μ
A
mV
μ
A
V
H
—
I
CCL
I
CCH
I
CCZ
Quiescent Power Supply Current
V
CC
= Max., V
IN
= GND or V
CC
—
5
500
Symbol
Parameter
Test Conditions
(1)
Min.
Typ.
(2)
Max.
Unit
I
CC
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply Current
(3)
V
CC
= Max.
V
IN
= 3.4V
V
CC
= Max.
Input toggling
50% Duty Cycle
Outputs Open
V
CC
= Max.
Input toggling
50% Duty Cycle
Outputs Open
fi = 50MHz
—
0.5
2.0
mA
I
CCD
V
IN
= V
CC
V
IN
= GND
—
0.4
0.6
mA/
MHz
I
C
Total Power Supply Current
(5)
V
IN
= V
CC
V
IN
= GND
—
20.0
30.5
(4)
mA
V
IN
= 3.4V
V
IN
= GND
—
20.3
31.3
(4)
3017 tbl 05
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25
°
C ambient.
3. Per TTL driven input; (V
IN
= 3.4V); all other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
I
CC
D
H
N
T
+ I
CCD
(f
i
)
I
CC
= Quiescent Current (I
CCL,
I
CCH
and
I
CCZ
)
I
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
i
= Input Frequency
All currents are in milliamps and all frequencies are in megahertz.
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IDT54FCT807CT Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 0.47uF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: -20+80%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: Z5U; Lead Style: Radial Leaded; Lead Dimensions: 0.200" Lead Spacing; Body Dimensions: 0.300" x 0.390" x 0.200"; Container: Bag; Qty per Container: 250
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