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參數(shù)資料
| 型號(hào)： | IDT54FCT810BTE |
| 廠(chǎng)商： | Integrated Device Technology, Inc. |
| 英文描述： | FAST CMOS BUFFER/CLOCK DRIVER |
| 中文描述： | 快速CMOS緩沖器/時(shí)鐘驅(qū)動(dòng)器 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 107K |
| 代理商： | IDT54FCT810BTE |
IDT54/74FCT810BT/CT
FAST CMOS BUFFER/CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
9.4
3
POWER SUPPLY CHARACTERISTICS
Symbol
Quiescent Power Supply Current
TTL Inputs HIGH
I
CCD
Dynamic Power Supply Current
(4)
3103 tbl 05
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25
°
C ambient.
3. Per TTL driven input; (V
IN
= 3.4V); all other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
I
CC
D
H
N
T
+ I
CCD
(f
O
N
O
)
I
CC
= Quiescent Current (I
CCL,
I
CCH
and
I
CCZ
)
I
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
O
= Output Frequency
N
O
= Number of Outputs at f
O
All currents are in milliamps and all frequencies are in megahertz.
Parameter
Test Conditions
(1)
Min.
—
Typ.
(2)
0.5
Max.
2.0
Unit
mA
I
CC
V
CC
= Max.
V
IN
= 3.4V
(3)
V
CC
= Max.
Outputs Open
OE
A
=
OE
B
= GND
50% Duty Cycle
V
IN
= V
CC
V
IN
= GND
—
60
100
μ
A/
MHz/bit
I
C
Total Power Supply Current
(6)
V
CC
= Max.
Outputs Open
fo= 25MHz
50% Duty Cycle
OE
A
= GND,
OE
B
=V
CC
V
CC
= Max.
Outputs Open
fo = 50MHz
50% Duty Cycle
OE
A
=
OE
B
= GND
V
IN
= V
CC
V
IN
= GND
—
7.5
13
mA
V
IN
= 3.4V
V
IN
= GND
V
IN
= V
CC
V
IN
= GND
—
7.8
14.0
—
30.0
50.5
(5)
V
IN
= 3.4V
V
IN
= GND
—
30.5
52.5
(5)
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