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參數(shù)資料
| 型號(hào)： | IDT6167LA35DB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | CMOS STATIC RAM 16K (16K x 1-BIT) |
| 中文描述： | 16K X 1 STANDARD SRAM, 35 ns, CDIP20 |
| 封裝： | 0.300 INCH, CERDIP-20 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 63K |
| 代理商： | IDT6167LA35DB |
5.2
3
IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
(1)
(V
CC
= 5.0V
±
10%, V
LC
= 0.2V, V
HC
= V
CC
– 0.2V)
6167SA/LA15
6167SA/LA20
Com’l.
6167SA/LA25
Com’l.
Symbol
Parameter
Power Com’l.
Mil.
Mil.
Mil.
Unit
I
CC1
Operating Power Supply Current
CS
≤
V
IL
, Outputs Open,
V
CC
= Max., f = 0
(3)
Dynamic Operating Current
CS
≤
V
IL
, Outputs Open,
V
CC
= Max., f = f
MAX(3)
Standby Power Supply Current
(TTL Level)
CS
≥
V
IH
, Outputs Open,
V
CC
= Max., f = f
MAX(3)
SA
90
90
90
90
90
90
mA
LA
SA
55
120
60
130
55
100
60
110
55
100
60
100
I
CC2
mA
LA
SA
100
50
110
50
80
35
85
35
70
35
75
35
I
SB
mA
LA
35
35
30
30
25
25
I
SB1
Full Standby Power Supply Current
(CMOS Level)
CS
≥
V
HC,
V
CC
= Max.
V
IN
≥
V
HC
or V
IN
≤
V
LC
, f = 0
(3)
SA
5
10
5
10
5
10
mA
LA
0.9
2
0.05
2
0.05
0.9
DC ELECTRICAL CHARACTERISTICS
(1)
(CONTINUED)
(V
CC
= 5.0V
±
10%, V
LC
= 0.2V, V
HC
= V
CC
– 0.2V)
6167SA/LA35 6167SA/LA45
(2)
6167SA/LA55
(2)
6167SA/LA70
(2)
Symbol
Parameter
Power
Com’l.
Mil.
Com’l.
Mil.
Com’l.
Mil.
Com’l.
Mil.
Unit
I
CC1
Operating Power Supply Current
CS
≤
V
IL
, Outputs Open,
V
CC
= Max., f = 0
(3)
Dynamic Operating Current
CS
≤
V
IL
, Outputs Open,
V
CC
= Max., f = f
MAX(3)
Standby Power Supply Current
(TTL Level)
CS
≥
V
IH
, Outputs Open,
V
CC
= Max., f = f
MAX(3)
SA
90
90
—
90
—
90
—
90
mA
LA
SA
55
100
60
100
—
—
60
100
—
—
60
100
—
—
60
100
I
CC2
mA
LA
SA
65
35
70
35
—
—
65
35
—
—
60
35
—
—
60
35
I
SB
mA
LA
20
20
—
20
—
20
—
15
I
SB1
Full Standby Power Supply Current
(CMOS Level)
CS
≥
V
HC,
V
CC
= Max.
V
IN
≥
V
HC
or V
IN
≤
V
LC
, f = 0
(3)
SA
5
10
—
10
—
10
—
10
mA
LA
0.05
0.9
—
0.9
—
0.9
—
0.9
NOTES:
1. All values are maximum guaranteed values.
2. –55
°
C to +125
°
C temperature range only. Also available; 85ns and 100ns Military devices.
3. f
MAX
= 1/t
RC
, only address inputs cycling at f
MAX
. f = 0 means no Address inputs change.
2981 tbl 07
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT6167LA35P | CMOS STATIC RAM 16K (16K x 1-BIT) |
| IDT6167LA35PB | CMOS STATIC RAM 16K (16K x 1-BIT) |
| IDT6167LA35Y | Enhanced-JFET Precision Dual Operational Amplifier 8-SOIC 0 to 70 |
| IDT6167LA45D | Enhanced-JFET Precision Dual Operational Amplifier 8-SOIC 0 to 70 |
| IDT6167LA45P | Enhanced-JFET Precision Dual Operational Amplifier 8-SOIC 0 to 70 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT6167LA35F | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x1 SRAM |
| IDT6167LA35P | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (16K x 1-BIT) |
| IDT6167LA35PB | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (16K x 1-BIT) |
| IDT6167LA35SO | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x1 SRAM |
| IDT6167LA35Y | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (16K x 1-BIT) |
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