參數(shù)資料
型號： IDT6167LA35P
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： CMOS STATIC RAM 16K (16K x 1-BIT)
中文描述： 16K X 1 STANDARD SRAM, 35 ns, PDIP20
封裝： 0.300 INCH, 2.54 MM PITCH, PLASTIC, DIP-20
文件頁數(shù)： 5/8頁
文件大?。?/td> 63K
代理商： IDT6167LA35P
5.2
5
IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC TEST CONDITIONS
Input Pulse Levels
GND to 3.0V
Input Rise/Fall Times
5ns
Input Timing Reference Levels
1.5V
Output Reference Levels
1.5V
AC Test Load
See Figures 1 and 2
2981 tbl 10
Figure 2. AC Test Load
(for t
CLZ
, t
CHZ
, t
WHZ
and t
OW
)
*Includes scope and jig.
Figure 1. AC Test Load
2981 drw 04
480
30pF*
255
DATA
OUT
5V
2981 drw 05
480
5pF*
255
DATA
OUT
5V
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5.0V
±
10%, All Temperature Ranges)
6167SA15
6167LA15
Min.
6167SA20/25 6167SA35/45
(1)
6167SA55
(1)
/70
(1)
6167LA20/25 6167LA35/45
(1)
6167LA55
(1)
/70
(1)
Min.
Max.
Min.
Max.
Symbol
Parameter
Max.
Min.
Max.
Unit
Read Cycle
t
RC
Read Cycle Time
15
—
20/25
—
35/45
—
55/70
—
ns
t
AA
Address Access Time
—
15
—
20/25
—
35/45
—
55/70
ns
t
ACS
t
CLZ(2)
t
CHZ(2)
Chip Select Access Time
—
15
—
20/25
—
35/45
—
55/70
ns
Chip Deselect to Output in Low-Z
3
—
5/5
—
5/5
—
5/5
—
ns
Chip Select to Output in High-Z
—
10
—
10/10
—
15/30
—
40/40
ns
t
OH
t
PU(2)
t
PD(2)
Output Hold from Address Change
3
—
5/5
—
5/5
—
5/5
—
ns
Chip Select to Power-Up Time
0
—
0/0
—
0/0
—
0/0
—
ns
Chip Deselect to Power-Down Time
—
15
—
20/25
—
35/45
—
55/70
ns
Write Cycle
t
WC
Write Cycle Time
15
—
20/20
—
30/45
—
55/70
—
ns
t
CW
Chip Select to End-of-Write
15
—
15/20
—
30/40
—
45/55
—
ns
t
AW
Address Valid to End-of-Write
15
—
15/20
—
30/40
—
45/55
—
ns
t
AS
Address Set-up Time
0
—
0/0
—
0/0
—
0/0
—
ns
t
WP
Write Pulse Width
13
—
15/20
—
30/30
—
35/40
—
ns
t
WR
Write Recovery Time
0
—
0/0
—
0/0
—
0/0
—
ns
t
DW
Data Valid to End-of-Write
10
—
12/15
—
17/20
—
25/30
—
ns
t
DH
t
WHZ(2)
t
OW(2)
Data Hold Time
0
—
0/0
—
0/0
—
0/0
—
ns
Write Enable to Output in High-Z
—
7
—
8/8
—
15/30
—
40/40
ns
Output Active from End-of-Write
0
—
0/0
—
0/0
—
0/0
—
ns
NOTES:
1. –55
°
C to +125
°
C temperature range only. Also available: 85ns and 100ns Military devices.
2. This parameter is guaranteed with AC Load (Figure 2) by device characterization, but is not production tested.
2981 tbl 11
相關PDF資料
PDF描述
IDT6167LA35PB CMOS STATIC RAM 16K (16K x 1-BIT)
IDT6167LA35Y Enhanced-JFET Precision Dual Operational Amplifier 8-SOIC 0 to 70
IDT6167LA45D Enhanced-JFET Precision Dual Operational Amplifier 8-SOIC 0 to 70
IDT6167LA45P Enhanced-JFET Precision Dual Operational Amplifier 8-SOIC 0 to 70
IDT6167SA100YB Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3121; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular Shell Style:Cable Receptacle RoHS Compliant: No
相關代理商/技術參數(shù)
參數(shù)描述
IDT6167LA35PB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (16K x 1-BIT)
IDT6167LA35SO 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 SRAM
IDT6167LA35Y 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (16K x 1-BIT)
IDT6167LA35YB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (16K x 1-BIT)
IDT6167LA45D 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (16K x 1-BIT)
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