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參數(shù)資料
| 型號(hào)： | IDT6167LA55DB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | Enhanced-JFET Precision Dual Operational Amplifier 8-SOIC 0 to 70 |
| 中文描述： | 16K X 1 STANDARD SRAM, 55 ns, CDIP20 |
| 封裝： | 0.300 INCH, CERDIP-20 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 63K |
| 代理商： | IDT6167LA55DB |
5.2
2
IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
DIP/SOJ
TOP VIEW
PIN DESCRIPTIONS
A
0
–A
13
Address Inputs
CS
Chip Select
WE
Write Enable
V
CC
Power
D
IN
DATA
IN
D
OUT
DATA
OUT
GND
Ground
2981 tbl 01
2981 drw 02
5
6
7
8
9
10
A
0
1
2
3
4
20
P20-1,
D20-1,
&
S020-1
A
1
A
2
A
3
A
4
A
5
A
6
V
CC
CS
A
13
A
12
D
IN
WE
GND
A
11
A
10
D
OUT
19
18
17
16
15
14
13
12
11
A
9
A
8
A
7
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade
Temperature
GND
V
CC
Military
–55
°
C to +125
°
C
0
°
C to +70
°
C
0V
5V
±
10%
5V
±
10%
Commercial
0V
2981 tbl 06
TRUTH TABLE
(1)
Mode
CS
WE
Output
Power
Standby
H
X
High-Z
Standby
Read
L
H
DATA
OUT
Active
Write
L
L
High-Z
Active
NOTE:
1. H = V
IH
, L = V
IL
, X = Don't Care.
2981 tbl 02
CAPACITANCE
(T
A
= +25
°
C, f = 1.0MHz)
Symbol
Parameter
(1)
Conditions
Max. Unit
C
IN
Input Capacitance
V
IN
= 0V
7
pF
C
OUT
Output Capacitance
V
OUT
= 0V
7
pF
NOTE:
1. This parameter is determined by device characterization, but is not
production tested.
2981 tbl 04
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
4.5
5.0
5.5
V
GND
Supply Voltage
0
0
0
V
V
IH
Input High Voltage
2.2
—
6.0
V
V
IL
Input Low Voltage
–0.5
(1)
—
0.8
V
NOTE:
1. V
IL
(min.) = –3.0V for pulse width less than 20ns, once per cycle.
2981 tbl 05
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
Com’l.
Mil.
Unit
V
TERM
Terminal Voltage
with Respect
to GND
–0.5 to +7.0
–0.5 to +7.0
V
T
A
Operating
Temperature
0 to +70
–55 to +125
°
C
T
BIAS
Temperature
Under Bias
–55 to +125
–65 to +135
°
C
T
STG
Storage
Temperature
–55 to +125
–65 to +150
°
C
P
T
Power Dissipation
1.0
1.0
W
I
OUT
DC Output
Current
50
50
mA
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2981 tbl 03
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT6167LA55P | Enhanced-JFET Precision Dual Operational Amplifier 8-PDIP 0 to 70 |
| IDT6167LA55PB | Enhanced-JFET Precision Dual Operational Amplifier 8-PDIP 0 to 70 |
| IDT6167LA55Y | Enhanced-JFET Precision Dual Operational Amplifier 8-SOIC -40 to 85 |
| IDT6167LA70D | Enhanced-JFET Precision Dual Operational Amplifier 8-SOIC -40 to 85 |
| IDT6167LA70DB | Enhanced-JFET Precision Dual Operational Amplifier 8-SOIC -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT6167LA55EB | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x1 SRAM |
| IDT6167LA55P | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (16K x 1-BIT) |
| IDT6167LA55PB | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (16K x 1-BIT) |
| IDT6167LA55Y | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (16K x 1-BIT) |
| IDT6167LA55YB | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (16K x 1-BIT) |
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