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參數(shù)資料
| 型號(hào)： | IDT6167SA100DB |
| 廠(chǎng)商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | CMOS STATIC RAM 16K (16K x 1-BIT) |
| 中文描述： | 16K X 1 STANDARD SRAM, 100 ns, CDIP20 |
| 封裝： | 0.300 INCH, CERDIP-20 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 63K |
| 代理商： | IDT6167SA100DB |
5.2
4
IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
V
CC
= 5.0V
±
10%
IDT6167SA
Min.
IDT6167LA
Min.
Symbol
Parameter
Test Condition
Max.
Max.
Unit
|I
LI
|
Input Leakage Current
V
CC
= Max.,
V
IN
= GND to V
CC
MIL
COM’L
—
—
10
5
—
—
5
2
μ
A
|I
LO
|
Output Leakage Current
V
CC
= Max.,
CS
= V
IH,
V
OUT
= GND to V
CC
MIL
COM’L
—
—
10
5
—
—
5
2
μ
A
V
OL
Output Low Voltage
I
OL
= 8mA, V
CC
= Min.
—
0.4
—
0.4
V
V
OH
Output High Voltage
I
OH
= –4mA, V
CC
= Min.
2.4
—
2.4
—
V
DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES
(LA Version Only) V
LC
= 0.2V, V
HC
= V
CC
– 0.2V
Typ.
(1)
V
CC
@
Max.
V
CC
@
Symbol
V
DR
I
CCDR
Parameter
Test Condition
Min.
2.0
—
—
0
2.0v
—
0.5
0.5
—
3.0V
—
1.0
1.0
—
2.0V
—
200
20
—
3.0V
—
300
30
—
Unit
V
μ
A
V
CC
for Data Retention
Data Retention Current
—
MIL.
COM’L.
t
CDR
Chip Deselect to Data
Retention Time
Operation Recovery Time
CS
≥
V
HC
VIN
≥
V
HC
or
≤
V
LC
ns
t
R(3)
|I
LI
|
(3)
t
RC(2)
—
—
—
—
ns
Input Leakage Current
—
—
—
—
2
2
μ
A
NOTES:
1. T
A
= +25
°
C.
2. t
RC
= Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
2981 tbl 09
LOW V
CC
DATA RETENTION WAVEFORM
2981 tbl 08
2981 drw 03
DATA
RETENTION
MODE
4.5V
4.5V
V
DR
≥
2V
V
IH
V
IH
t
R
t
CDR
V
CC
CS
V
DR
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT6167SA100P | CMOS STATIC RAM 16K (16K x 1-BIT) |
| IDT6167SA100PB | CMOS STATIC RAM 16K (16K x 1-BIT) |
| IDT6167SA100Y | CMOS STATIC RAM 16K (16K x 1-BIT) |
| IDT6167SA15D | CMOS STATIC RAM 16K (16K x 1-BIT) |
| IDT6167SA15DB | CMOS STATIC RAM 16K (16K x 1-BIT) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT6167SA100EB | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x1 SRAM |
| IDT6167SA100P | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (16K x 1-BIT) |
| IDT6167SA100PB | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (16K x 1-BIT) |
| IDT6167SA100Y | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (16K x 1-BIT) |
| IDT6167SA100YB | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (16K x 1-BIT) |
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