參數(shù)資料
型號(hào)： IDT6168LA35D
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： Enhanced-JFET Precision Quad Operational Amplifier 14-SOIC 0 to 70
中文描述： 4K X 4 STANDARD SRAM, 35 ns, CDIP20
封裝： 0.300 INCH, CERDIP-20
文件頁(yè)數(shù)： 2/9頁(yè)
文件大小： 91K
代理商： IDT6168LA35D
2
IDT6168SA/LA
CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Commercial Temperature Ranges
Pin Configurations
Absolute Maximum Ratings
(1)
Recommended DC Operating
Conditions
Symbol
Parameter
Recommended Operating
Temperature and Supply Voltage
Truth Table
(1)
DIP/LCC
Top View
Capacitance
(T
A
= +25°C, f = 1.0MHz)
Parameter
(1)
Pin Descriptions
3090 drw 02
5
6
7
8
9
10
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
1
2
3
4
20
P20-1
D20-1
L20-1
V
CC
A
11
A
10
A
9
A
8
I/O
3
I/O
2
I/O
1
I/O
0
CS
WE
GND
19
18
17
16
15
14
13
12
11
,
Name
Description
A
0
- A
11
Address Inputs
CS
Chip Select
WE
Write Enable
I/O
0
- I/O
3
Data Input/Output
V
CC
Power
GND
Ground
3090 tbl 01
NOTE:
1. This parameter is determned by device characterization, but is not production
tested.
Symbol
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
7
pF
C
I/O
I/O Capacitance
V
OUT
= 0V
7
pF
3090 tbl 02
NOTE:
1. H = V
IH
, L = V
IL
, X = Don't Care
Mode
CS
WE
Output
Power
Standby
H
X
High-Z
Standby
Read
L
H
D
OUT
Active
Write
L
L
D
IN
Active
3090 tbl 03
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximumrating conditions for extended periods may
affect reliability.
Symbol
Rating
Com'l.
Mil.
Unit
V
TERM
Termnal Voltage
wth Respect
to GND
-0.5 to +7.0
-0.5 to +7.0
V
T
A
Operating
Temperature
0 to +70
-55 to +125
o
C
T
BIAS
Temperature
Under Bias
-55 to +125
-65 to +135
o
C
T
STG
Storage Temperature
-55 to +125
-65 to +150
o
C
P
T
Power Dissipation
1.0
1.0
W
I
OUT
DC Output Current
50
50
mA
3090 tbl 04
NOTE:
1. V
IL
(mn.) = –3.0V for pulse width less than 20ns, once per cycle.
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
4.5
5.0
5.5
V
GND
Ground
0
0
0
V
V
IH
Input High Voltage
2.2
____
6.0
V
V
IL
Input Low Voltage
-0.5
(1)
____
0.8
V
3090 tbl 05
Grade
Temperature
GND
Vcc
Military
-55
O
C to +125
O
C
0V
5V ± 10%
Industrial
-45
O
C to +85
O
C
0V
5V ± 10%
Commercial
0
O
C to +70
O
C
0V
5V ± 10%
3090 tbl 06
相關(guān)PDF資料
PDF描述
IDT6168LA35DB Enhanced-JFET Precision Quad Operational Amplifier 14-SOIC 0 to 70
IDT6168LA35P Enhanced-JFET Precision Quad Operational Amplifier 14-PDIP 0 to 70
IDT6168LA35PB Enhanced-JFET Precision Quad Operational Amplifier 14-PDIP 0 to 70
IDT6168SA25D Low-Power JFET-Input General-Purpose Operational Amplifier 8-SOIC -40 to 85
IDT6168SA25LB CMOS STATIC RAM 16K (4K x 4-BIT)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT6168LA35DB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (4K x 4-BIT)
IDT6168LA35EB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SRAM
IDT6168LA35F 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SRAM
IDT6168LA35P 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (4K x 4-BIT)
IDT6168LA35PB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (4K x 4-BIT)
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