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參數(shù)資料
| 型號(hào)： | IDT6168LA35P |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | Enhanced-JFET Precision Quad Operational Amplifier 14-PDIP 0 to 70 |
| 中文描述： | 4K X 4 STANDARD SRAM, 35 ns, PDIP20 |
| 封裝： | 0.300 INCH, 2.54 MM PITCH, PLASTIC, DIP-20 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 91K |
| 代理商： | IDT6168LA35P |
6.42
IDT6168SA/LA
CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Commercial Temperature Ranges
3
DC Electrical Characteristics
(1)
(V
CC
= 5.0V ± 10%, V
LC
= 0.2V, V
HC
= V
CC
- 0.2V)
DC Electrical Characteristics
V
CC
= 5.0V ± 10%
Symbol
Parameter
Power
6168SA15
6168SA20
6168LA20
6168SA25
6168LA25
6168SA45
6168LA45
Unit
Com'l.
Mil.
Com'l.
Mil.
Com'l.
& Ind.
Mil.
Com'l.
Mil.
I
CC1
Operating Power Supply Current
CS
< V
IL
, Outputs Open
V
CC
= Max., f
=
0
(2)
SA
110
____
90
____
90
100
____
100
mA
LA
____
____
70
____
70
80
____
80
I
CC2
Dynamc Operating Current
CS
< V
IL
, Outputs Open
V
CC
= Max., f = f
MAX
(2)
SA
145
____
120
____
110
120
____
110
mA
LA
____
____
100
____
90
100
____
80
I
SB
Standby Power Supply Current
(TTL Level)
CS
> V
IH
, Outputs Open
V
CC
= Max., f = f
MAX
(2)
SA
55
____
45
____
35
45
____
35
mA
LA
____
____
30
____
25
30
____
25
I
SB1
Full Standby Power Supply
Current (CMOS Level)
CS
> V
HC
, V
CC
= Max.,
V
IN
< V
LC
or V
IN
> V
HC
, f = 0
(2)
SA
20
____
20
____
3
10
____
10
mA
LA
____
____
0.5
____
0.5
0.3
____
0.3
3090 tbl 07
NOTES:
1. All values are maximumguaranteed values.
2. f
MAX
= 1/t
RC
, only address inputs are cycling at f
MAX
. f = 0 means no address inputs are changing.
Symbol
Parameter
Test Conditions
IDT6168SA
IDT6168LA
Unit
Min.
Max.
Min.
Max.
|
LI
|
Input Leakage Current
V
CC
= Max.,
V
IN
=
GND to V
CC
MIL.
COML.
____
____
10
2
____
____
5
2
μA
|
LO
|
Output Leakage Current
V
CC
= Max.,
CS
= V
IH
,
V
OUT
= GND to V
CC
MIL.
COML.
____
____
10
2
____
____
5
2
μA
V
OL
Output LOW Voltage
I
OL
= 10mA, V
CC
= Min.
____
0.5
____
0.5
V
I
OL
= 8mA, V
CC
= Min.
____
0.4
____
0.4
V
OH
Output HIGH Voltage
I
OH
= -4mA, V
CC
= Min.
2.4
____
2.4
____
V
3090 tbl 09
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT6168LA35PB | Enhanced-JFET Precision Quad Operational Amplifier 14-PDIP 0 to 70 |
| IDT6168SA25D | Low-Power JFET-Input General-Purpose Operational Amplifier 8-SOIC -40 to 85 |
| IDT6168SA25LB | CMOS STATIC RAM 16K (4K x 4-BIT) |
| IDT6168SA25P | Low-Power JFET-Input General-Purpose Operational Amplifier 8-PDIP -40 to 85 |
| IDT6168SA25PI | Low-Power JFET-Input General-Purpose Operational Amplifier 8-PDIP -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT6168LA35PB | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (4K x 4-BIT) |
| IDT6168LA35SO | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (4K x 4-BIT) |
| IDT6168LA35SOB | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (4K x 4-BIT) |
| IDT6168LA35Y | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x4 SRAM |
| IDT6168LA45D | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (4K x 4-BIT) |
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