參數(shù)資料
型號: IDT6168SA45DB
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: CMOS STATIC RAM 16K (4K x 4-BIT)
中文描述: 4K X 4 STANDARD SRAM, 45 ns, CDIP20
封裝: 0.300 INCH, CERAMIC, DIP-20
文件頁數(shù): 6/9頁
文件大?。?/td> 91K
代理商: IDT6168SA45DB
6
IDT6168SA/LA
CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Commercial Temperature Ranges
AC Electrical Characteristics
(V
CC
= 5.0V ± 10%, All Temperature Ranges)
NOTES:
1. 0° to +70°C temperature range only.
2. –55°C to +125°C temperature range only.
3. This parameter is guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested.
Symbol
Parameter
6168SA15
(1)
6168SA20
(1)
6168LA20
(1)
6168SA25
6168LA25
6168SA45
(2)
6168LA45
(2)
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Write Cycle
t
WC
Write Cycle Time
15
____
20
____
20
____
40
____
ns
t
CW
Chip Select to End-of-Write
15
____
20
____
20
____
40
____
ns
t
AW
Address Valid to End-of-Write
15
____
20
____
20
____
40
____
ns
t
AS
Address Set-up Time
0
____
0
____
0
____
0
____
ns
t
WP
Write Pulse Width
15
____
20
____
20
____
40
____
ns
t
WR
Write Recovery Time
0
____
0
____
0
____
0
____
ns
t
DW
Data to Valid to End-of-Write
9
____
10
____
10
____
20
____
ns
t
DH
Data Hold Time
0
____
0
____
0
____
3
____
ns
t
WHZ
(3)
Write Enable to Output in High-Z
____
6
____
7
____
7
____
20
ns
t
OW
(3)
Output Active fromEnd-of-Write
0
____
0
____
0
____
0
____
ns
3090 tbl 13
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