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參數(shù)資料
| 型號(hào)： | IDT6178S10PB |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | CMOS StaticRAM 16K (4K x 4-BIT) CACHE-TAG RAM |
| 中文描述： | 的CMOS StaticRAM 16K的（4K的× 4位）高速緩存標(biāo)記內(nèi)存 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | IDT6178S10PB |
11.1
4
IDT6178S
CMOS StaticRAM 16K (4K x 4-BIT) CACHE-TAG RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGE
CYCLE DESCRIPTION
Match Cycle:
A match cycle occurs when all control signals
(
OE
,
WE
,
CLR
) are HIGH. At that time, data supplied to the
RAM on the I/O pins is compared with the data stored at the
specified address. The totem-pole match output is HIGH
when there is a match at all data bits, and drives LOW if there
is not a match.
Write Cycle:
The write cycle is conventional, occuring when
WE
is LOW and
CLR
is HIGH.
OE
may be either HIGH or LOW,
since it is overridden by
WE
. The state of the Match pin is not
guaranteed, but in the current implementation it continues to
reflect the output of the comparator. The Match pin goes
HIGH during write cycles since the data at the specified
address is the same as the data (being written) at the I/Os of
the RAM.
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5.0V
±
10%, All Temperature Ranges)
Read Cycle:
When
WE
and
CLR
are HIGH and
OE
is LOW,
the RAM is in a read cycle. The state of the Match pin is not
guaranteed, but in the current implementation it continues to
reflect the output of the comparator. The Match pin goes
HIGH during read cycles since the data at the specified
address is the same as the data (being read) at the I/Os of the
RAM.
Clear Cycle:
When
CLR
is asserted, every bit in the RAM is
cleared to zero. If
OE
is LOW during a clear cycle, the RAM
I/Os will be driven. However, this data is not necessarily
zeros, even after a considerable time. The Match pin is
enabled, but its state is not predicable.
NOTE:
1. It is not recommended to let address and data input pins float while MATCH pin is active.
TIMING WAVEFORM OF MATCH CYCLE
(1)
6178S10
(1)
6178S12
6178S15
6178S20
6178S25
Symbol
Match Cycle
t
ADM
t
DAM
t
MHO
t
OEM
t
MHW
t
WEM
t
MHCLR
t
MHA
t
MHD
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Address to Match Valid
Data Input to Match Valid
Match Valid Hold from
OE
OE
HIGH to Match Valid
Match Valid Hold from
WE
WE
HIGH to Match Valid
Match Valid Hold from
CLR
Match Valid Hold from Address
Match Valid Hold from Data
—
—
0
—
0
—
0
3
3
10
8
—
10
—
10
—
—
—
—
—
0
—
0
—
0
3
3
12
11
—
12
—
12
—
—
—
—
—
0
—
0
—
0
3
3
15
13
—
15
—
15
—
—
—
—
—
0
—
0
—
0
3
3
20
15
—
20
—
20
—
—
—
—
—
0
—
0
—
0
3
3
25
15
—
20
—
20
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTE:
1. 0
°
C to +70
°
C temperature range only.
2953 tbl 10
2953 drw 07
OE
ADDRESS
t
MHA
t
ADM
t
OEM
t
MHO
WE
CLR
I/O
1–4
MATCH
t
WEM
t
MHW
t
MHCLR
t
MHD
t
DAM
VALID MATCH DATA
IN
MATCH VALID
MATCH
MATCH
NO MATCH
VALID READ DATA
OUT
相關(guān)PDF資料 |
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| IDT6178S10Y | IC 16-BIT 2 PORT BUS SW 48-BQSOP |
| IDT6178S10YB | 3.3V 24:48 Mux/Demux Bus Switch |
| IDT6178S25D | IC 8-BIT BUS SW 2-PORT 20-QSOP |
| IDT6178S25DB | CMOS StaticRAM 16K (4K x 4-BIT) CACHE-TAG RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT6178S10Y | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS StaticRAM 16K (4K x 4-BIT) CACHE-TAG RAM |
| IDT6178S10YB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS StaticRAM 16K (4K x 4-BIT) CACHE-TAG RAM |
| IDT6178S12CB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Cache-Tag RAM |
| IDT6178S12D | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS StaticRAM 16K (4K x 4-BIT) CACHE-TAG RAM |
| IDT6178S12DB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS StaticRAM 16K (4K x 4-BIT) CACHE-TAG RAM |
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