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參數(shù)資料
| 型號(hào)： | IDT7005L25F |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM |
| 中文描述： | 8K X 8 DUAL-PORT SRAM, 25 ns, QFP68 |
| 封裝： | 0.970 X 0.970 INCH, 0.080 INCH HEIGHT, QFP-68 |
| 文件頁數(shù)： | 20/20頁 |
| 文件大?。?/td> | 265K |
| 代理商： | IDT7005L25F |
IDT7005S/L
HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.06
9
IDT7005X15
IDT7005X17
IDT7005X20
IDT7005X25
Com'l. Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
tWC
Write Cycle Time
15
—
17
—
20
—
25
—
ns
tEW
Chip Enable to End-of-Write
(3)
12
—
12
—
15
—
20
—
ns
tAW
Address Valid to End-of-Write
12
—
12
—
15
—
20
—
ns
tAS
Address Set-up Time
(3)
0
—
0
—
0
—
0
—
ns
tWP
Write Pulse Width
12
—
12
—
15
—
20
—
ns
tWR
Write Recovery Time
0
—
0
—
0
—
0
—
ns
tDW
Data Valid to End-of-Write
10
—
10
—
15
—
15
—
ns
tHZ
Output High-Z Time
(1, 2)
—
10
—
10
—
12
—
15
ns
tDH
Data Hold Time
(4)
0
—
0
—
0
—
0
—
ns
tWZ
Write Enable to Output in High-Z
(1, 2)
—
10
—
10
—
12
—
15
ns
tOW
Output Active from End-of-Write
(1, 2, 4)
0
—
0
—
0
—
0
—
ns
tSWRD
SEM Flag Write to Read Time
5
—
5
—
5
—
5
—
ns
tSPS
SEM Flag Contention Window
5
—
5
—
5
—
5
—
ns
IDT7005X35
IDT7005X55
IDT7005X70
Mil. Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
tWC
Write Cycle Time
35
—
55
—
70
—
ns
tEW
Chip Enable to End-of-Write
(3)
30
—
45
—
50
—
ns
tAW
Address Valid to End-of-Write
30
—
45
—
50
—
ns
tAS
Address Set-up Time
(3)
0—
ns
tWP
Write Pulse Width
25
—
40
—
50
—
ns
tWR
Write Recovery Time
0
—
0
—
0
—
ns
tDW
Data Valid to End-of-Write
15
—
30
—
40
—
ns
tHZ
Output High-Z Time
(1, 2)
—15—25
—30
ns
tDH
Data Hold Time
(4)
0—
ns
tWZ
Write Enable to Output in High-Z
(1, 2)
—15—25
—30
ns
tOW
Output Active from End-of-Write
(1, 2, 4)
0—
ns
tSWRD
SEM Flag Write to Read Time
5
—
5
—
5
—
ns
tSPS
SEM Flag Contention Window
5
—
5
—
5
—
ns
NOTES:
2738 tbl 14
1. Transition is measured
±500mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization but is not production tested.
3. To access RAM,
CE = VIL, SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary
over voltage and temperature, the actual tDH will always be smaller than the actual tOW.
5. "X" in part numbers indicates power rating (S or L).
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE (5)
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| IDT7005L25FB | 制造商:Integrated Device Technology Inc 功能描述: 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 25NS 68FLATPAK |
| IDT7005L25G | 功能描述:IC SRAM 64KBIT 25NS 68PGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，同步 存儲(chǔ)容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT7005L25GB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 25NS 68PGA |
| IDT7005L25J | 功能描述:IC SRAM 64KBIT 25NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，異步 存儲(chǔ)容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT7005L25J8 | 功能描述:IC SRAM 64KBIT 25NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
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