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| 型號： | IDT7005L25G |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM |
| 中文描述： | 8K X 8 DUAL-PORT SRAM, 25 ns, CPGA68 |
| 封裝： | 1.180 X 1.180 INCH, 0.160 INCH HEIGHT, CERAMIC, PGA-68 |
| 文件頁數(shù)： | 16/20頁 |
| 文件大?。?/td> | 265K |
| 代理商： | IDT7005L25G |
IDT7005S/L
HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.06
5
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(1) (VCC = 5.0V
± 10%)
7005X15
7005X17
7005X20
7005X25
Test
Com'l. Only
Symbol
Parameter
Condition
Version
Typ.
(2) Max. Typ.(2) Max.
Typ.
(2) Max. Typ.(2) Max. Unit
ICC
Dynamic Operating
CE = VIL, Outputs Open
MIL.
S
—
160
370
155
340
mA
Current
SEM = VIH
L
—
150
320
145
280
(Both Ports Active)
f = fMAX
(3)
COM.
S
170
310
170
310
160
290
155
265
L
160
260
160
260
150
240
145
220
ISB1
Standby Current
CEL = CER = VIH
MIL.
S
—
20
90
16
80
mA
(Both Ports — TTL
SEMR = SEML = VIH
L
—
10
70
10
65
Level Inputs
f = fMAX
(3)
COM.
S
20
60
20
60
20
60
16
60
L
10
60
10
50
10
50
10
50
ISB2
Standby Current
CE"A"=VIL and CE"B"=VIH(5) MIL. S
—
95
240
90
215
mA
(One Port — TTL
Active Port Outputs Open
L
—
85
210
80
180
Level Inputs)
f = fMAX
(3)
COM.
S
105
190
105
190
95
180
90
170
SEMR = SEML > VIH
L
95
160
95
160
85
150
80
140
ISB3
Full Standby Current Both Ports
CEL and
MIL.
S
—
1.0
30
1.0
30
mA
(Both Ports — All
CER > VCC - 0.2V(5)
L
—
0.2
10
0.2
10
CMOS Level Inputs) VIN > VCC - 0.2V or
COM.
S
1.0
15
1.0
15
1.0
15
1.0
15
VIN < 0.2V, f = 0
(4)
L
0.2
5
0.2
5
0.2
5
0.2
5
SEMR = SEML > VCC - 0.2V
ISB4
Full Standby Current
CE"B" < 0.2V and
MIL.
S
—
90
225
85
200
mA
(One Port — All
CE"B" > VCC - 0.2v
CMOS Level Inputs)
SEMR = SEML > VCC - 0.2V
L
—
80
200
75
170
VIN > VCC - 0.2V or
COM.S
100
170
100
170
90
155
85
145
VIN < 0.2V
Active Port Outputs Open,
L
90
140
90
140
80
130
75
120
f = fMAX
(3)
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE (VCC = 5.0V
± 10%)
IDT7005S
IDT7005L
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
|ILI|
Input Leakage Current
(1)
VCC = 5.5V, VIN = 0V to VCC
—10
—
5
A
|ILO|
Output Leakage Current
CE = VIH, VOUT = 0V to VCC
—10
—
5
A
VOL
Output Low Voltage
IOL = 4mA
—
0.4
—
0.4
V
VOH
Output High Voltage
IOH = -4mA
2.4
—
2.4
—
V
NOTES:
2738 tbl 09
1. "X" in part numbers indicates power rating (S or L).
2. VCC = 5V, TA = +25
°C, and are not production tested. ICC DC = 120mA typ.)
3. At f = fMAX
, address and I/O'S are cycling at the maximum frequency read cycle of 1/tRC, and using “AC Test Conditions” of input levels of GND to 3V.
4. f = 0 means no address or control lines change.
5. Port "A"may be either left or right port. Port "B" is the port opposite port "A".
NOTE:
2738 tbl 08
1. At Vcc < 2.0V input leakages are undefined.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7005L25GB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 25NS 68PGA |
| IDT7005L25J | 功能描述:IC SRAM 64KBIT 25NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT7005L25J8 | 功能描述:IC SRAM 64KBIT 25NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT7005L25JB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM |
| IDT7005L25PF | 功能描述:IC SRAM 64KBIT 25NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
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