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參數(shù)資料
| 型號： | IDT7006S25FB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | Low Dropout LED Driver for White, Blue or any Color LED; Package: SC70; No of Pins: 6; Container: Tape & Reel |
| 中文描述： | 16K X 8 DUAL-PORT SRAM, 25 ns, PQFP68 |
| 封裝： | 0.970 X 0.970 INCH, 0.080 INCH HEIGHT, QFP-68 |
| 文件頁數(shù)： | 17/20頁 |
| 文件大?。?/td> | 263K |
| 代理商： | IDT7006S25FB |
IDT7006S/L
HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.07
17
Figure 3. Busy and chip enable routing for both width and depth expansion with IDT7006 RAMs.
2739 drw 19
MASTER
Dual Port
RAM
BUSY
L
BUSY
R
CE
MASTER
Dual Port
RAM
BUSY
L
BUSY
R
CE
SLAVE
Dual Port
RAM
BUSY
L
BUSY
R
CE
SLAVE
Dual Port
RAM
BUSY
L
BUSY
R
CE
BUSY
L
BUSY
R
D
applications. In some cases it may be useful to logically OR
the busy outputs together and use any busy indication as an
interrupt source to flag the event of an illegal or illogical
operation. If the write inhibit function of busy logic is not
desirable, the busy logic can be disabled by placing the part in
slave mode with the M/
S
pin. Once in slave mode the
BUSY
pin operates solely as a write inhibit input pin. Normal opera-
tion can be programmed by tying the
BUSY
pins high. If
desired, unintended write operations can be prevented to a
port by tying the busy pin for that port low.
The busy outputs on the IDT 7006 RAM in master mode,
are push-pull type outputs and do not require pull up resistors
to operate. If these RAMs are being expanded in depth, then
the busy indication for the resulting array requires the use of
an external AND gate.
WIDTH EXPANSION WITH BUSY LOGIC
MASTER/SLAVE ARRAYS
When expanding an IDT7006 RAM array in width while
using busy logic, one master part is used to decide which side
of the RAMs array will receive a busy indication, and to output
that indication. Any number of slaves to be addressed in the
same address range as the master, use the busy signal as a
write inhibit signal. Thus on the IDT7006 RAM the busy pin is
an output if the part is used as a master (M/
S
pin = H), and the
busy pin is an input if the part used as a slave (M/
S
pin = L) as
shown in Figure 3.
If two or more master parts were used when expanding in
width, a split decision could result with one master indicating
busy on one side of the array and another master indicating
busy on one other side of the array. This would inhibit the write
operations from one port for part of a word and inhibit the write
operations from the other port for the other part of the word.
The busy arbitration, on a master, is based on the chip
enable and address signals only. It ignores whether an access
is a read or write. In a master/slave array, both address and
chip enable must be valid long enough for a busy flag to be
output from the master before the actual write pulse can be
initiated with the R/
W
signal. Failure to observe this timing can
result in a glitched internal write inhibit signal and corrupted
SEMAPHORES
The IDT7006 is an extremely fast Dual-Port 16K x 8 CMOS
Static RAM with an additional 8 address locations dedicated
to binary semaphore flags. These flags allow either processor
on the left or right side of the Dual-Port RAM to claim a
privilege over the other processor for functions defined by the
system designer’s software. As an example, the semaphore
can be used by one processor to inhibit the other from
accessing a portion of the Dual-Port RAM or any other shared
resource.
The Dual-Port RAM features a fast access time, and both
ports are completely independent of each other. This means
that the activity on the left port in no way slows the access time
of the right port. Both ports are identical in function to standard
CMOS Static RAM and can be read from, or written to, at the
same time with the only possible conflict arising from the
simultaneous writing of, or a simultaneous READ/WRITE of,
a non-semaphore location. Semaphores are protected against
such ambiguous situations and may be used by the system
program to avoid any conflicts in the non-semaphore portion
of the Dual-Port RAM. These devices have an automatic
power-down feature controlled by
CE
, the Dual-Port RAM
enable, and
SEM
, the semaphore enable. The
CE
and
SEM
pins control on-chip power down circuitry that permits the
respective port to go into standby mode when not selected.
This is the condition which is shown in Truth Table where
CE
and
SEM
are both high.
Systems which can best use the IDT7006 contain multiple
processors or controllers and are typically very high-speed
systems which are software controlled or software intensive.
These systems can benefit from a performance increase
offered by the IDT7006s hardware semaphores, which pro-
vide a lockout mechanism without requiring complex pro-
gramming.
Software handshaking between processors offers the
maximum in system flexibility by permitting shared resources
to be allocated in varying configurations. The IDT7006 does
not use its semaphore flags to control any resources through
hardware, thus allowing the system designer total flexibility in
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| IDT7006S25G | 功能描述:IC SRAM 128KBIT 25NS 68PGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT7006S25GB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 128KBIT 25NS 68PGA |
| IDT7006S25J | 功能描述:IC SRAM 128KBIT 25NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT7006S25J8 | 功能描述:IC SRAM 128KBIT 25NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT7006S25JB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM |
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