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參數(shù)資料
| 型號： | IDT7006S35FB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | Regulated Step-Down Charge Pump DC-DC Converter; Package: MLP; No of Pins: 10; Container: Tape & Reel |
| 中文描述： | 16K X 8 DUAL-PORT SRAM, 35 ns, PQFP68 |
| 封裝： | 0.970 X 0.970 INCH, 0.080 INCH HEIGHT, QFP-68 |
| 文件頁數(shù)： | 2/20頁 |
| 文件大?。?/td> | 263K |
| 代理商： | IDT7006S35FB |
6.07
2
IDT7006S/L
HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
memory system applications results in full-speed, error-free
operation without the need for additional discrete logic.
This device provides two independent ports with separate
control, address, and I/O pins that permit independent,
asynchronous access for reads or writes to any location in
memory. An automatic power down feature controlled by
CE
permits the on-chip circuitry of each port to enter a very low
standby power mode.
Fabricated using IDT’s CMOS high-performance technol-
ogy, these devices typically operate on only 750mW of power.
Low-power (L) versions offer battery backup data retention
capability with typical power consumption of 500
μ
W from a 2V
battery.
The IDT7006 is packaged in a ceramic 68-pin PGA, a 68-
pin quad flatpack, a 68-pin PLCC, and a 64-pin TQFP (thin
plastic quad flatpack) . Military grade product is manufactured
in compliance with the latest revision of MIL-STD-883, Class
B, making it ideally suited to military temperature applications
demanding the highest level of performance and reliability.
PIN CONFIGURATIONS
(1,2)
INDEX
IDT7006
PN-64
TQFP
TOP VIEW
(3)
8
9
10
11
12
13
14
15
16
1
2
3
4
5
6
7
46
45
44
43
42
41
40
39
38
37
36
35
34
33
47
48
1
1
1
2
3
3
3
2
2
2
2
2
2
2
2
2
4
5
5
5
6
6
6
6
5
5
5
5
5
5
5
6
I/O
2L
I/O
3L
I/O
4L
I/O
5L
V
CC
GND
I/O
0R
I/O
1R
I/O
2R
V
CC
I/O
3R
I/O
4R
I/O
5R
GND
I/O
6L
I/O
7L
A
4R
BUSY
L
GND
M/
S
BUSY
R
INT
R
A
0R
INT
L
O
L
A
5
I
1
R
W
L
C
L
S
L
V
C
O
R
C
R
R
W
R
S
R
A
1
G
I
6
I
7
A
1
A
1
A
9
A
8
A
7
A
6
A
5
A
3R
A
2R
A
1R
A
0L
A
1L
A
2L
A
3L
A
4L
A
6
A
7
A
8
A
9
A
1
A
1
A
1
I
0
2739 drw 03
A
1
A
1
2739 drw 02
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
INDEX
9
8
7
6
5
4
3
2
1 68 67 66 65
27 28 29 30 31 32 33 34 35 36 37 38 39
V
C
V
CC
GND
I/O
0R
I/O
1R
I/O
2R
V
CC
I/O
3R
I/O
4R
I/O
5R
I/O
6R
INT
L
BUSY
L
GND
GND
I/O
6L
I/O
7L
A
4L
A
3L
A
2L
A
1L
A
0L
A
3R
A
4R
A
0R
A
1R
A
2R
I/O
2L
I/O
3L
I/O
4L
I/O
5L
A
5L
R
W
L
11
10
M/
S
BUSY
R
INT
R
40 41 42 43
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
59
60
64 63 62 61
A
1
I
7
N
G
O
R
R
W
R
S
R
C
R
O
L
S
L
C
L
N
I
0
I
1
IDT7006
J68-1
F68-1
PLCC / FLATPACK
TOP VIEW
(3)
N
A
1
N
A
1
A
1
A
9
A
8
A
7
A
6
A
5
A
1
A
1
A
9
A
8
A
7
A
6
A
1
A
1
NOTES:
1. All Vcc pins must be connected to the power supply.
2. All GND pins must be connected to the ground supply.
3. This text does not indicate orientation of the the actual part-marking.
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| IDT7006S35G | 功能描述:IC SRAM 128KBIT 35NS 68PGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT7006S35GB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 128KBIT 35NS 68PGA |
| IDT7006S35J | 功能描述:IC SRAM 128KBIT 35NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT7006S35J8 | 功能描述:IC SRAM 128KBIT 35NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT7006S35JB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM |
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