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參數(shù)資料
| 型號： | IDT7014S15J |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | Low-Power JFET-Input Operational Amplifier 8-SO 0 to 70 |
| 中文描述： | 4K X 9 DUAL-PORT SRAM, 15 ns, PQCC52 |
| 封裝： | 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 72K |
| 代理商： | IDT7014S15J |
6.11
3
IDT7014S
HIGH-SPEED 4K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(V
CC
= 5.0V
±
10%)
IDT7014S
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Test Condition
V
CC
= 5.5V, V
IN
= 0V to V
CC
V
OUT
= 0V to V
CC
I
OL
= 4mA
I
OH
= –4mA
Min.
—
—
—
2.4
Max.
10
10
0.4
—
Unit
μ
A
μ
A
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
V
V
2528 tbl 04
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(V
CC
= 5V
±
10%)
IDT7014S12
IDT7014S15
IDT7014S20
IDT7014S25
IDT7014S35
Com'l. Only
Typ.
Max.
Typ.
Max.
160
260
155
260
Test
Com'l. Only
Typ.
—
Mil. Only
Typ.
150
Symbol
I
CC
Parameter
Dynamic
Operating
Current (Both
Ports Active)
Condition
Outputs Open
f = f
MAX
(1)
Version
Mil.
Max.
—
Typ.
150
Max.
255
Max.
250
Unit
mA
Com’l.
160
250
160
250
155
245
150
240
—
—
NOTE:
1. At f = fmax, address inputs are cycling at the maximum read cycle of 1/t
RC
using the "AC Test Conditions" input levels of GND to 3V.
2528 tbl 05
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
3ns
1.5V
1.5V
Figures 1, 2, and 3
2528 tbl 06
Symbol
C
IN
C
OUT
NOTES:
1. This parameter is determined by device characteristics but is not tested.
2. 3dv references the interperlated capacitance when the input and output
signals swith from 0V to 3V or from 3V to 0V.
Parameter
Input Capacitance
Output Capacitance
Condition
(2)
V
IN
= 3dV
V
OUT
= 3dV
Max.
9
10
Unit
pF
pF
2528 tbl 07
CAPACITANCE
(1)
(T
A
= +25
°
C, f = 1.0MHz) TQFP Package Only
893
30pF
347
DATA
OUT
BUSY
INT
5V
5V
893
5pF
347
DATA
OUT
2528 drw 05
2528 drw 04
Figure 1. AC Output Test Load.
Figure 2. Output Test Load
(for t
HZ
, t
WZ
, and t
OW
)
Including scope and jig.
Figure 3. Typical Output Derating (Lumped Capacitive Load).
1
2
3
4
5
6
7
8
20 40
100
60 80
Capacitance (pF)
120 140 160 180 200
t
AA
(Typical, ns)
2528 drw 06
-1
0
- 10pF is the I/O capacitance
of this device, and 3 pF is the
AC Test Load Capacitance
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| IDT7014S15J8 | 功能描述:IC SRAM 36KBIT 15NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應商設備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT7014S15JI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 4K x 9DUAL-PORT STATIC RAM |
| IDT7014S15PF | 功能描述:IC SRAM 36KBIT 15NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應商設備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT7014S15PF8 | 功能描述:IC SRAM 36KBIT 15NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應商設備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT7014S15PFI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 4K x 9DUAL-PORT STATIC RAM |
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