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參數(shù)資料
| 型號： | IDT7014S35PF |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 4K x 9 DUAL-PORT STATIC RAM |
| 中文描述： | 高速4K的× 9雙端口靜態(tài)RAM |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 72K |
| 代理商： | IDT7014S35PF |
6.11
2
IDT7014S
HIGH-SPEED 4K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
(1,2)
NOTES
:
1. All V
CC
pins must be connected to power supply.
2. All ground pins must be connected to ground supply.
3. This text does not indicate the orientation of the actual part-marking
2528 tbl 02
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Grade
Temperature
Military
–55
°
C to +125
°
C
Commercial
0
°
C to +70
°
C
GND
0V
0V
VCC
5.0V
±
10%
5.0V
±
10%
RECOMMENDED DC OPERATING
CONDTIONS
Symbol
Parameter
V
CC
Supply Voltage
GND
Supply Voltage
V
IH
Input High Voltage
V
IL
Input Low Voltage
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. VTERM must not exceed Vcc + 0.5V.
Min.
4.5
0
2.2
–0.5
(1)
Typ.
5.0
0
—
—
Max.
5.5
0
6.0
(2)
0.8
Unit
V
V
V
V
2528 tbl 03
2528 drw 02
IDT 7014
J52-1
PLCC
Top View (3)
INDEX
A
6
A
5
A
4
A
3
A
2
A
1
A
0
A
0
A
1
A
2
A
3
A
4
A
5
46
45
44
43
42
41
40
39
38
37
36
35
34
I/O
6L
A
6L
A
7L
A
8L
A
9L
A
10L
A
11L
OE
L
V
CC
R/
W
L
GND
I/O
8L
I/O
7L
8
9
10
11
12
13
14
15
16
17
18
19
20
47
48
49
50
51
52
1
2
3
4
5
6
7
33
32
31
30
29
28
27
26
25
24
23
22
21
I/O
6R
I/O
5R
I/O
7R
GND
I/O
8R
R/
W
R
GND
OE
R
A
11R
A
10R
A
8R
A
9R
A
7R
I
5
V
C
I
4
I
3
I
2
I
1
I
0
I
0
I
1
I
2
I
3
I
4
V
C
INDEX
IDT7014
PN64-1
TQFP
Top View (3)
8
9
10
11
12
13
14
15
16
1
2
3
4
5
6
7
G
G
N
N
N
N
46
45
44
43
42
41
40
39
38
37
36
35
34
33
47
48
1
1
1
2
3
3
3
2
2
2
2
2
2
2
2
2
4
5
5
5
6
6
6
6
5
5
5
5
5
5
5
6
N/C
V
CC
A
10L
A
11L
OE
L
N/C
R/
W
L
N/C
GND
I/O
8L
I/O
7L
I/O
6L
A
9L
A
6L
A
7L
A
8L
I/O
6R
GND
N/C
R/
W
R
A
7R
A
8R
A
9R
A
10R
A
11R
OE
R
N/C
N/C
GND
I/O
8R
I/O
7R
A
6R
2528 drw 03
I
5
V
C
I
4
I
3
I
2
I
1
I
0
I
0
I
1
I
2
I
3
V
C
I
4
I
5
A
5
A
4
A
3
A
2
A
1
A
0
A
0
A
1
A
2
A
3
A
4
A
5
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
V
TERM
(2)
Terminal Voltage
with Respect to
GND
V
TERM
(3)
Terminal Voltage
T
A
Operating
Temperature
T
BIAS
Temperature
Under Bias
T
STG
Storage
Temperature
I
OUT
DC Output Current
Commercial
–0.5 to +7.0
Military
–0.5 to +7.0
Unit
V
–0.5 to Vcc
0 to +70
–0.5 to Vcc
–55 to +125
V
°
C
–55 to +125
–65 to +135
°
C
–55 to +125
–65 to +150
°
C
50
50
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. V
TERM
must not exceed Vcc + 0.5V for more than 25% of the cycle time
or 10ns maximum, and is limited to < 20mA for the period of V
TERM
> Vcc
+ 0.5V.
2528 tbl 01
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相關代理商/技術(shù)參數(shù) |
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| IDT7014S35XLB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x9 Dual-Port SRAM |
| IDT7015 | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM |
| IDT7015L | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM |
| IDT7015L12G | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM |
| IDT7015L12GB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM |
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