參數(shù)資料
型號(hào): IDT7016L15PFB
廠商: Integrated Device Technology, Inc.
英文描述: Quad Low-Power JFET-Input General-Purpose Operational Amplifier 14-SO -40 to 85
中文描述: 高速16K的× 9雙端口靜態(tài)RAM
文件頁(yè)數(shù): 12/20頁(yè)
文件大?。?/td> 262K
代理商: IDT7016L15PFB
6.13
12
IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
BUSY TIMING (M/
S
= V
IL
)
BUSY
Input to Write
(4)
Write Hold After
BUSY
(5)
t
WB
0
0
0
ns
t
WH
15
17
25
ns
PORT-TO-PORT DELAY TIMING
Write Pulse to Data Delay
(1)
Write Data Valid to Read Data Delay
(1)
NOTES:
1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveformof Write with Port-to-Port Read and
BUSY
(M/
S
= V
IH
)".
2. To ensure that the earlier of the two ports wins.
3. t
BDD
is a calculated parameter and is the greater of 0, t
WDD
– t
WP
(actual), or t
DDD
– t
DW
(actual).
4. To ensure that the write cycle is inhibited on port "B" during contention on port "A".
5. To ensure that a write cycle is completed on port "B" after contention on port "A".
6. "X" in part numbers indicates power rating (S or L).
t
WDD
45
50
60
ns
t
DDD
30
30
35
ns
IDT7016X20
IDT7016X25
IDT7016X35
Symbol
BUSY TIMING (M/
S
= V
IH
)
t
BAA
BUSY
Access Time from Address Match
t
BDA
BUSY
Disable Time from Address Not Matched
t
BAC
BUSY
Access Time from Chip Enable Low
t
BDC
BUSY
Disable Time from Chip Enable High
Arbitration Priority Set-up Time
(2)
BUSY
Disable to Valid Data
(3)
Write Hold After
BUSY
(5)
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
17
20
20
20
17
20
20
20
20
20
20
20
ns
ns
ns
ns
t
APS
5
5
5
ns
t
BDD
30
30
35
ns
t
WH
15
17
25
ns
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(6)
IDT7016X12
Com'l. Only
Min.
IDT7016X15
Com'l. Only
Min.
Symbol
BUSY TIMING (M/
S
= V
IH
)
t
BAA
BUSY
Access Time from Address Match
t
BDA
BUSY
Disable Time from Address Not Matched
t
BAC
BUSY
Access Time from Chip Enable Low
t
BDC
BUSY
Disable Time from Chip Enable High
t
APS
Arbitration Priority Set-up Time
(2)
t
BDD
BUSY
Disable to Valid Data
(3)
t
WH
Write Hold After
BUSY
(5)
Parameter
Max.
Max.
Unit
5
11
12
12
12
12
15
5
13
15
15
15
15
18
ns
ns
ns
ns
ns
ns
ns
BUSY TIMING (M/
S
= V
IL
)
t
WB
BUSY
Input to Write
(4)
Write Hold After
BUSY
(5)
PORT-TO-PORT DELAY TIMING
Write Pulse to Data Delay
(1)
Write Data Valid to Read Data Delay
(1)
0
0
ns
t
WH
11
13
ns
t
WDD
25
30
ns
t
DDD
20
25
ns
2940 tbl 13
相關(guān)PDF資料
PDF描述
IDT7016L20G Quad Low-Power JFET-Input General-Purpose Operational Amplifier 14-SO -40 to 85
IDT7016L20GB Quad Low-Power JFET-Input General-Purpose Operational Amplifier 14-SO -40 to 85
IDT7016L20J Quad Low-Power JFET-Input Operational Amplifier 14-SOIC 0 to 70
IDT7016L20JB Quad Low-Power JFET-Input Operational Amplifier 14-SOIC 0 to 70
IDT7016L20PF Quad Low-Power JFET-Input Operational Amplifier 14-SOIC 0 to 70
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7016L15PFG 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM
IDT7016L15PFGB 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM
IDT7016L15PFGI 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM
IDT7016L17J 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x9 Dual-Port SRAM
IDT7016L17PF 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x9 Dual-Port SRAM