參數(shù)資料
型號： IDT7016L25GB
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： Quad Low-Power JFET-Input Operational Amplifier 14-SOIC 0 to 70
中文描述： 16K X 9 DUAL-PORT SRAM, 25 ns, CPGA68
封裝： CERAMIC, PGA-68
文件頁數(shù)： 6/20頁
文件大?。?/td> 262K
代理商： IDT7016L25GB
6.13
6
IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(1)
(Cont'd)
(V
CC
= 5.0V
±
10%)
7016X20
7016X25
7016X35
Test
Symbol
I
CC
Parameter
Condition
Version
MIL.
Typ.
(2)
—
—
160
160
—
—
20
20
—
—
95
95
—
—
1.0
0.2
Max.
—
—
290
240
—
—
60
50
—
—
180
150
—
—
15
5
Typ.
(2)
155
155
155
155
16
16
16
16
90
90
90
90
1.0
0.2
1.0
0.2
Max. Typ.
(2)
340
280
265
220
80
65
60
50
215
180
170
140
30
10
15
5
Max. Unit
300
250
250
210
80
65
60
50
190
160
155
130
30
10
15
5
Dynamic Operating
Current
(Both Ports Active)
CE
= V
IL
, Outputs Open
SEM
= V
IH
f = f
MAX(3)
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
150
150
150
150
13
13
13
13
85
85
85
85
1.0
0.2
1.0
0.2
mA
COM’L.
I
SB1
Standby Current
(Both Ports — TTL
Level Inputs)
CE
L
=
CE
R
= V
IH
SEM
R
=
SEM
L
= V
IH
f = f
MAX(3)
MIL.
mA
COM’L.
I
SB2
Standby Current
(One Port — TTL
Level Inputs)
CE
"A"
=V
IL
and
CE
"B"
=V
IH(5)
Active Port Outputs Open
f = f
MAX(3)
SEM
R
=
SEM
L
= V
IH
Both Ports
CE
L
and
CE
R
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V, f = 0
(4)
SEM
R
=
SEM
L
> V
CC
- 0.2V
CE
"A"
<
0.2V and
CE
"B"
> V
CC
- 0.2V
(5)
SEM
R
=
SEM
L
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V
Active Port Outputs Open,
f = f
MAX(3)
MIL.
mA
COM’L.
I
SB3
Full Standby Current
(Both Ports — All
CMOS Level Inputs)
MIL.
mA
COM’L.
I
SB4
Full Standby Current
(One Port — All
CMOS Level Inputs)
MIL.
S
L
—
—
—
—
85
85
200
170
80
80
175
150
mA
COM’L.
S
L
90
90
155
130
85
85
145
120
80
80
135
110
NOTES:
1. "X" in part numbers indicates power rating (S or L).
2. V
CC
= 5V, T
A
= +25
°
C, and are not production tested. I
CCDC
= 120mA(typ.)
3. At f = f
MAX
,
address and I/Os are cycling at the maximum frequency read cycle of 1/t
RC
.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite of port "A".
3190 tbl 10
OUTPUT LOADS AND AC TEST
CONDITIONS
Input Pulse Levels GND to 3.0V
Input Rise/Fall Times
(1)
5ns Max.
Input Timing Reference Levels 1.5V
Output Reference Levels 1.5V
Output Load Figures 1 and 2
3190 drw 06
893
30pF
347
5V
DATA
OUT
BUSY
INT
893
5pF
347
5V
DATA
OUT
Figure 1. AC Output Test Load
Figure 2. Output Test Load
( for t
LZ
, t
HZ
, t
WZ
, t
OW
)
Including scope and jig.
NOTE:
1. 3ns max for t
AA
= 12ns
相關(guān)PDF資料
PDF描述
IDT7016L25J Quad Low-Power JFET-Input Operational Amplifier 14-PDIP 0 to 70
IDT7016L25JB Quad Low-Power JFET-Input Operational Amplifier 14-PDIP 0 to 70
IDT7016L25PF Quad Low-Power JFET-Input Operational Amplifier 14-SOIC 0 to 70
IDT7016L25PFB Quad Low-Power JFET-Input Operational Amplifier 14-SOIC 0 to 70
IDT7016L35G HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7016L25GG 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM
IDT7016L25GGB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM
IDT7016L25GGI 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM
IDT7016L25J 功能描述:IC SRAM 144KBIT 25NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT7016L25J8 功能描述:IC SRAM 144KBIT 25NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF
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