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參數(shù)資料
| 型號： | IDT7016S15PFGB |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| 中文描述： | 高速16K的× 9雙端口靜態(tài)RAM |
| 文件頁數(shù)： | 6/20頁 |
| 文件大?。?/td> | 173K |
| 代理商： | IDT7016S15PFGB |
6.42
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
DC Elec tric al Charac teristic s Over the Operating
Temperature and S upply Voltage R ange
(1)
(c on't.)
(V
CC
= 5.0V ± 10%)
APRIL 04, 2006
NOTES:
1. 'X' in part numbers indicates power rating (S or L)
2.
V
CC
= 5V, T
A
= +25°C, and are not production tested. I
CCDC
= 120mA(typ.)
3.
At f = f
MAX
,
address and I/Os are cycling at the maximumfrequency read cycle of 1/t
RC
.
4.
f = 0 means no address or control lines change.
5.
Port "A" may be either left or right port. Port "B" is the opposite of Port "A".
7016X12
Coml Only
7016X15
Com'l Only
Symbol
Parameter
Test Condition
Version
Typ.
(2)
Max.
Typ.
(2)
Max.
Unit
I
CC
Dynamc Operating
Current
(Both Ports Active)
CE
= V
IL
, Outputs Disabled
SEM
= V
IH
f = f
MAX
(3)
COML
S
L
170
170
325
275
170
170
310
260
mA
MIL &
IND
S
L
____
____
____
____
____
____
____
____
I
SB1
Standby Current
(Both Ports - TTL
Level Inputs)
CE
R
=
CE
= V
IH
SEM
R
=
SEM
L
= V
IH
f = f
MAX
(3)
COML
S
L
25
25
70
60
25
25
60
50
mA
MIL &
IND
S
L
____
____
____
____
____
____
____
____
I
SB2
Standby Current
(One Port - TTL
Level Inputs)
CE
= V
and
CE
= V
(5)
Active Port Outputs Disabled,
f=f
MAX
(3)
SEM
R
=
SEM
L
= V
IH
COML
S
L
105
105
200
170
105
105
190
160
mA
MIL &
IND
S
L
____
____
____
____
____
____
____
____
I
SB3
Full Standby Current
(Both Ports - All CMOS
Level Inputs)
Both Ports
CE
L
and
CE
R
> V
CC
- 0.2V
V
IN
> V
- 0.2V or
V
< 0.2V, f = 0
(4)
SEM
R
=
SEM
L
> V
CC
- 0.2V
COML
S
L
1.0
0.2
15
5
1.0
0.2
15
5
mA
MIL &
IND
S
L
____
____
____
____
____
____
____
____
I
SB4
Full Standby Current
(One Port - All CMOS
Level Inputs)
CE
"A"
< 0.2V and
CE
"B"
> V
- 0.2V
(5)
SEM
=
SEM
> V
- 0.2V
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
Active Port Outputs Disabled
f = f
MAX
(3)
COML
S
L
100
100
180
150
100
100
170
140
mA
MIL &
IND
S
L
____
____
____
____
____
____
____
____
3190 tbl 10
7016X20
Com'l, Ind
& Mlitary
7016X25
Coml &
Mlitary
7016X35
Com'l &
Mlitary
Symbol
Parameter
Test Condition
Version
Typ.
(2)
Max.
Typ.
(2)
Max.
Typ.
(2)
Max.
Unit
I
CC
Dynamc Operating Current
(Both Ports Active)
CE
= V
IL
, Outputs Disabled
SEM
= V
IH
f = f
MAX
(3)
COML
S
L
160
160
290
240
155
155
265
220
150
150
250
210
mA
MIL &
IND
S
L
160
160
380
310
155
155
340
280
150
150
300
250
I
SB1
Standby Current
(Both Ports - TTL
Level Inputs)
CE
R
=
CE
= V
SEM
R
=
SEM
L
= V
IH
f = f
MAX
(3)
COML
S
L
20
20
60
50
16
16
60
50
13
13
60
50
mA
MIL &
IND
S
L
20
20
80
65
16
16
80
65
13
13
80
65
I
SB2
Standby Current
(One Port - TTL
Level Inputs)
CE
"A"
= V
IL
and
CE
"B"
= V
IH
(5)
Active Port Outputs Disabled,
f=f
MAX
(3)
SEM
R
=
SEM
L
= V
IH
COML
S
L
95
95
180
150
90
90
170
140
85
85
155
130
mA
MIL &
IND
S
L
95
95
240
210
90
90
215
180
85
85
190
160
I
SB3
Full Standby Current
(Both Ports - All CMOS
Level Inputs)
Both Ports
CE
L
and
CE
R
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or
V
< 0.2V, f = 0
(4)
SEM
R
=
SEM
L
> V
CC
- 0.2V
COML
S
L
1.0
0.2
15
5
1.0
0.2
15
5
1.0
0.2
15
5
mA
MIL &
IND
S
L
1.0
0.2
30
10
1.0
0.2
30
10
1.0
0.2
30
10
I
SB4
Full Standby Current
(One Port - All CMOS Level
Inputs)
CE
"A"
< 0.2V and
CE
"B"
> V
- 0.2V
(5)
SEM
R
=
SEM
L
> V
CC
- 0.2V
V
> V
- 0.2V or V
< 0.2V
Active Port Outputs Disabled
f = f
MAX
(3)
COML
S
L
90
90
155
130
85
85
145
120
80
80
135
110
mA
MIL &
IND
S
L
90
90
230
200
85
85
200
170
80
80
175
150
3190 tbl 11
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| IDT7016S15PFGI | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
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參數(shù)描述 |
|---|---|
| IDT7016S15PFGI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
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| IDT7016S20GB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
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