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| 型號： | IDT7016S15PFGI |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| 中文描述： | 高速16K的× 9雙端口靜態(tài)RAM |
| 文件頁數(shù)： | 13/20頁 |
| 文件大?。?/td> | 173K |
| 代理商： | IDT7016S15PFGI |
6.42
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Read with
BUSY
(2,4,5)
(M/
S
= V
IH
)
13
APRIL 04, 2006
3190 drw 13
t
DW
t
APS
ADDR
"A"
t
WC
DATA
OUT "B"
MATCH
t
WP
R/
W
"A"
DATA
IN "A"
ADDR
"B"
t
DH
VALID
(1)
MATCH
BUSY
"B"
t
BDA
VALID
t
BDD
t
DDD
(3)
t
WDD
T iming Waveform of Write with
BUSY
(3)
NOTES:
1. t
WH
must be met for both
BUSY
input (SLAVE) and output (MASTER).
2.
BUSY
is asserted on port "B" blocking R/
W
"B"
, until
BUSY
"B"
goes HIGH.
3. All timng is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite fromPort "A".
NOTES:
1. To ensure that the earlier of the two ports wins. t
APS
is ignored for M/
S
=V
IL
.
2.
CE
L
=
CE
R
= V
IL
.
3.
OE
= V
IL
for the reading port.
4. If M/
S
=V
IL
(SLAVE),
BUSY
is an input. Then for this example
BUSY
“A”
= V
IH
and
BUSY
“B”
input is shown above.
5. All timng is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite fromPort "A".
3190 drw 14
R/
W
"A"
BUSY
"B"
t
WP
t
WB
R/
W
"B"
t
WH
(1)
(2)
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| IDT7016S17J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x9 Dual-Port SRAM |
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| IDT7016S20G | 功能描述:IC SRAM 144KBIT 20NS 68PGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT7016S20GB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
| IDT7016S20GG | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
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