參數(shù)資料
型號(hào): IDT7016S20JG
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM
中文描述: 16K X 9 DUAL-PORT SRAM, 20 ns, PQCC68
封裝: 0.95 X 0.95 INCH, 0.17 INCH HEIGHT, GREEN, PLASTIC, LCC-68
文件頁(yè)數(shù): 10/20頁(yè)
文件大?。?/td> 173K
代理商: IDT7016S20JG
6.42
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
T iming Waveform of Write Cycle No. 1, R/
W
Controlled T iming
(1,5,8)
APRIL 04, 2006
NOTES:
1. R/
W
or
CE
must be HIGH during all address transitions.
2. A write occurs during the overlap (t
EW
or t
WP
) of a LOW
CE
and a LOW R/
W
for memory array writing cycle.
3. t
WR
is measured fromthe earlier of
CE
or R/
W
(or
SEM
or R/
W
) going HIGH to the end of write cycle.
4. During this period, the I/O pins are in the output state and input signals must not be applied.
5. If the
CE
or
SEM
LOW transition occurs simultaneously with or after the R/
W
LOW transition, the outputs remain in the High-impedance state.
6. Timng depends on which enable signal is asserted last,
CE
or R/
W
.
7. This parameter is guaranteed by device characterization but is not production tested. Transition is measured 0mV fromsteady state with the Output Test Load (Figure
2).
8. If
OE
is LOW during R/
W
controlled write cycle, the write pulse width must be the larger of t
WP
or (t
WZ
+ t
DW
) to allow the I/O drivers to turn off and data to be
placed on the bus for the required t
DW
. If
OE
is HIGH during an R/
W
controlled write cycle, this requirement does not apply and the write pulse can be as short as
the specified t
WP
.
9. To access RAM
CE
= V
IL
and
SEM
= V
IH
. To access Semaphore,
CE
= V
IH
and
SEM
= V
IL
.
t
EW
must be met for either condition.
T iming Waveform of Write Cycle No. 2,
CE
Controlled T iming
(1,5)
R/
W
t
WC
t
HZ
t
AW
t
WR
t
AS
t
WP
DATA
OUT
(2)
t
WZ
t
DW
t
DH
t
OW
OE
ADDRESS
DATA
IN
CE
or
SEM
(6)
(4)
(4)
(3)
3190 drw 09
(7)
(9)
(7)
t
LZ
3190 drw 10
t
WC
t
AS
t
WR
t
DW
t
DH
ADDRESS
DATA
IN
CE
or
SEM
R/
W
t
AW
t
EW
(3)
(2)
(6)
(9)
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IDT7016S20JGB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM
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