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參數(shù)資料
| 型號： | IDT7016S20JGB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| 中文描述： | 16K X 9 DUAL-PORT SRAM, 20 ns, PQCC68 |
| 封裝： | 0.95 X 0.95 INCH, 0.17 INCH HEIGHT, GREEN, PLASTIC, LCC-68 |
| 文件頁數(shù)： | 13/20頁 |
| 文件大小： | 173K |
| 代理商： | IDT7016S20JGB |
6.42
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Read with
BUSY
(2,4,5)
(M/
S
= V
IH
)
13
APRIL 04, 2006
3190 drw 13
t
DW
t
APS
ADDR
"A"
t
WC
DATA
OUT "B"
MATCH
t
WP
R/
W
"A"
DATA
IN "A"
ADDR
"B"
t
DH
VALID
(1)
MATCH
BUSY
"B"
t
BDA
VALID
t
BDD
t
DDD
(3)
t
WDD
T iming Waveform of Write with
BUSY
(3)
NOTES:
1. t
WH
must be met for both
BUSY
input (SLAVE) and output (MASTER).
2.
BUSY
is asserted on port "B" blocking R/
W
"B"
, until
BUSY
"B"
goes HIGH.
3. All timng is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite fromPort "A".
NOTES:
1. To ensure that the earlier of the two ports wins. t
APS
is ignored for M/
S
=V
IL
.
2.
CE
L
=
CE
R
= V
IL
.
3.
OE
= V
IL
for the reading port.
4. If M/
S
=V
IL
(SLAVE),
BUSY
is an input. Then for this example
BUSY
“A”
= V
IH
and
BUSY
“B”
input is shown above.
5. All timng is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite fromPort "A".
3190 drw 14
R/
W
"A"
BUSY
"B"
t
WP
t
WB
R/
W
"B"
t
WH
(1)
(2)
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PDF描述 |
|---|---|
| IDT7016S20JGI | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S20PFG | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S20PFGB | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S20PFGI | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S25GG | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7016S20JGI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S20PF | 功能描述:IC SRAM 144KBIT 20NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應商設備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT7016S20PF8 | 功能描述:IC SRAM 144KBIT 20NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應商設備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT7016S20PFB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
| IDT7016S20PFG | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
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