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參數(shù)資料
| 型號： | IDT7016S20PFG |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| 中文描述： | 16K X 9 DUAL-PORT SRAM, 20 ns, PQFP80 |
| 封裝： | 14 X 14 MM, 1.4 MM HEIGHT, GREEN, TQFP-80 |
| 文件頁數(shù)： | 7/20頁 |
| 文件大小： | 173K |
| 代理商： | IDT7016S20PFG |
6.42
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
AC Elec tric al Charac teristic s Over the
Operating Temperature and S upply Voltage Range
(4)
7
APRIL 04, 2006
NOTES:
1. Transition is measured 0mV fromLow- or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization but not production tested.
3. To access RAM
CE
= V
IL
and
SEM
= V
IH
. To access semaphore,
CE
= V
IH
and
SEM
= V
IL
.
4. 'X' in part numbers indicates power rating (S or L).
7016X12
Coml Only
7016X15
Coml Only
Unit
Symbol
Parameter
Mn.
Max.
Mn.
Max.
READ CYCLE
t
RC
Read Cycle Time
12
____
15
____
ns
t
AA
Address Access Time
____
12
____
15
ns
t
ACE
Chip Enable Access Time
(3)
____
12
____
15
ns
t
AOE
Output Enable Access Time
____
8
____
10
ns
t
OH
Output Hold fromAddress Change
3
____
3
____
ns
t
LZ
Output Low-Z Time
(1,2)
3
____
3
____
ns
t
HZ
Output High-Z Time
(1,2)
____
10
____
10
ns
t
PU
Chip Enable to Power Up Time
(2)
0
____
0
____
ns
t
PD
Chip Disable to Power Down Time
(2)
____
12
____
15
ns
t
SOP
Semaphore Flag Update Pulse (
OE
or
SEM
)
10
____
10
____
ns
t
SAA
Semaphore Address Access Time
____
12
____
15
ns
3190 tbl 12a
7016X20
Com'l, Ind
& Mlitary
7016X25
Com'l &
Mlitary
7016X35
Com'l &
Mlitary
Unit
Symbol
Parameter
Min.
Max.
Mn.
Max.
Mn.
Max.
READ CYCLE
t
RC
Read Cycle Time
20
____
25
____
35
____
ns
t
AA
Address Access Time
____
20
____
25
____
35
ns
t
ACE
Chip Enable Access Time
(3)
____
20
____
25
____
35
ns
t
AOE
Output Enable Access Time
____
12
____
13
____
20
ns
t
OH
Output Hold fromAddress Change
3
____
3
____
3
____
ns
t
LZ
Output Low-Z Time
(1,2)
3
____
3
____
3
____
ns
t
HZ
Output High-Z Time
(1,2)
____
12
____
15
____
20
ns
t
PU
Chip Enable to Power Up Time
(2)
0
____
0
____
0
____
ns
t
PD
Chip Disable to Power Down Time
(2)
____
20
____
25
____
35
ns
t
SOP
Semaphore Flag Update Pulse (
OE
or
SEM
)
10
____
10
____
10
____
ns
t
SAA
Semaphore Address Access Time
____
20
____
25
____
35
ns
3190 tbl 12b
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT7016S20PFGB | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S20PFGI | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S25GG | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S25GGB | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S25GGI | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7016S20PFGB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S20PFGI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S25G | 功能描述:IC SRAM 144KBIT 25NS 68PGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT7016S25GB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
| IDT7016S25GG | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
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