參數(shù)資料
型號： IDT7016S25G
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： Low-Noise JFET-Input General-Purpose Operational Amplifier 8-SOIC 0 to 70
中文描述： 16K X 9 DUAL-PORT SRAM, 25 ns, CPGA68
封裝： CERAMIC, PGA-68
文件頁數(shù)： 5/20頁
文件大小： 262K
代理商： IDT7016S25G
IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.13
5
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(1)
(V
CC
= 5.0V
±
10%)
7016X12 7016X15
Com'l. Only Com'l. Only
Test
Condition Version Typ.
(2)
Max. Typ.
(2)
Max.
Unit
Dynamic Operating
CE
= VIL, Outputs Open
Current
SEM
= V
IH
(Both Ports Active) f = f
MAX(3)
Symbol
I
CC
Parameter
MIL.
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
—
—
170
170
—
—
25
25
—
—
105
105
—
—
1.0
0.2
—
—
325
275
—
—
70
60
—
—
200
170
—
—
15
5
—
—
170
170
—
—
25
25
—
—
105
105
—
—
1.0
0.2
—
—
310
260
—
—
60
50
—
—
190
160
—
—
15
5
mA
COM’L.
I
SB1
Standby Current
CE
R
=
CE
L
= V
IH
(Both Ports — TTL
SEM
R
=
SEM
L
= V
IH
Level Inputs)
MIL.
mA
f = f
MAX(3)
COM’L.
I
SB2
Standby Current
(One Port — TTL
Level Inputs) f = f
MAX(3)
CE
"A"
=V
IL
and
CE
"B"
= V
IH(5)
MIL.
Active Port Outputs Open
mA
COM’L.
SEM
R
=
SEM
L
= V
IH
Both Ports
CE
L
and
CE
R
> V
CC
- 0.2V
I
SB3
Full Standby Current
MIL.
mA
(Both Ports — All
CMOS Level Inputs) V
IN
> V
CC
- 0.2V or
COM’L.
V
IN
< 0.2V, f = 0
(4)
SEM
R
=
SEM
L
> V
CC
- 0.2V
CE
"A"
<
0.2V and
CE
"B"
> V
CC
- 0.2V
(5)
SEM
R
=
SEM
L
> V
CC
- 0.2V
V
>V
- 0.2V or V
<0.2V
Active Port Outputs Open,
f = f
MAX(3)
I
SB4
Full Standby Current
MIL.
S
L
—
—
—
—
—
—
—
—
mA
(One Port — All
CMOS Level Inputs)
COM'L.
S
L
100
100
180
150
100
100
170
140
NOTES:
3190 tbl 09
1. "X" in part numbers indicates power rating (S or L).
2. V
CC
= 5V, T
A
= +25
°
C, and are not production tested. I
CCDC
= 120mA(typ.)
3. At f = f
MAX
,
address and I/Os are cycling at the maximum frequency read cycle of 1/t
RC.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite of port "A".
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(V
CC
= 5.0V
±
10%)
7016S
7016L
Symbol
|I
LI
|
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
μ
A
μ
A
V
V
3190 tbl 08
Input Leakage Current
(1)
V
CC
= 5.5V, V
IN
= 0V to V
CC
—
10
—
5
|I
LO
|
V
OL
V
OH
Output Leakage Current
Output Low Voltage
Output High Voltage
CE
= V
IH
, V
OUT
= 0V to V
CC
I
OL
= 4mA
I
OH
= -4mA
—
—
2.4
10
0.4
—
—
—
2.4
5
0.4
—
NOTE:
1. At Vcc < 2.0V, Input leakages are undefined.
相關(guān)PDF資料
PDF描述
IDT7016S25GB Low-Noise JFET-Input General-Purpose Operational Amplifier 8-SOIC 0 to 70
IDT7016S25J Low-Noise JFET-Input General-Purpose Operational Amplifier 8-PDIP 0 to 70
IDT7016S25JB Low-Noise JFET-Input General-Purpose Operational Amplifier 8-PDIP 0 to 70
IDT7016S25PF Low-Noise JFET-Input General-Purpose Operational Amplifier 8-SO 0 to 70
IDT7016S25PFB Low-Noise JFET-Input General-Purpose Operational Amplifier 8-SO 0 to 70
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7016S25GB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
IDT7016S25GG 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM
IDT7016S25GGB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM
IDT7016S25GGI 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM
IDT7016S25J 功能描述:IC SRAM 144KBIT 25NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF
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