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參數(shù)資料
| 型號： | IDT7016S25PFB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | Low-Noise JFET-Input General-Purpose Operational Amplifier 8-SO 0 to 70 |
| 中文描述： | 16K X 9 DUAL-PORT SRAM, 25 ns, PQFP80 |
| 封裝： | TQFP-80 |
| 文件頁數(shù)： | 7/20頁 |
| 文件大小： | 262K |
| 代理商： | IDT7016S25PFB |
IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.13
7
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(4)
IDT7016X12 IDT7016X15
Com'l. Only Com'l. Only
Min. Max Min. Max. Unit
Symbol
READ CYCLE
t
RC
Parameter
Read Cycle Time
12
—
15
—
ns
t
AA
t
ACE
Address Access Time
Chip Enable Access Time
(3)
—
—
12
12
—
—
15
15
ns
ns
t
AOE
Output Enable Access Time
—
8
—
10
ns
t
OH
t
LZ
Output Hold from Address Change
Output Low-Z Time
(1, 2)
Output High-Z Time
(1, 2)
Chip Enable to Power Up Time
(2)
Chip Disable to Power Down Time
(2)
3
3
—
—
3
3
—
—
ns
ns
t
HZ
—
10
—
10
ns
t
PU
t
PD
0
—
—
12
0
—
—
15
ns
ns
t
SOP
Semaphore Flag Update Pulse (
OE
or
SEM
)
10
—
10
—
ns
t
SAA
Semaphore Address Access Time
—
12
—
15
ns
IDT7016X20
IDT7016X25
IDT7016X35
Symbol
READ CYCLE
t
RC
t
AA
t
ACE
t
AOE
t
OH
t
LZ
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Read Cycle Time
Address Access Time
Chip Enable Access Time
(3)
Output Enable Access Time
Output Hold from Address Change
Output Low-Z Time
(1, 2)
Output High-Z Time
(1, 2)
Chip Enable to Power Up Time
(2)
Chip Disable to Power Down Time
(2)
20
—
—
—
3
3
—
20
20
12
—
—
25
—
—
—
3
3
—
25
25
13
—
—
35
—
—
—
3
3
—
35
35
20
—
—
ns
ns
ns
ns
ns
ns
t
HZ
—
12
—
15
—
20
ns
t
PU
t
PD
0
—
—
20
0
—
—
25
0
—
—
35
ns
ns
t
SOP
Semaphore Flag Update Pulse (
OE
or
SEM
)
10
—
10
—
15
—
ns
t
SAA
Semaphore Address Access Time
—
20
—
25
—
35
ns
NOTES:
1. Transition is measured
±
200mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization but not production tested.
3. To access RAM,
CE
= V
IL
and
SEM
= V
IH
. To access semaphore,
CE
= V
IH
and
SEM
= V
IL
.
4. "X" in part numbers indicates power rating (S or L).
3190 tbl 11
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT7016S35G | Low-Noise JFET-Input General-Purpose Operational Amplifier 8-SO 0 to 70 |
| IDT7016S35GB | HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
| IDT7016S35J | Low-Noise JFET-Input General-Purpose Operational Amplifier 8-SOIC -40 to 85 |
| IDT7016S35JB | Low-Noise JFET-Input General-Purpose Operational Amplifier 8-SOIC -40 to 85 |
| IDT7016S35PF | Low-Noise JFET-Input General-Purpose Operational Amplifier 8-SOIC -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7016S25PFG | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S25PFGB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S25PFGI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S35G | 功能描述:IC SRAM 144KBIT 35NS 68PGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT7016S35GB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
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