參數(shù)資料
型號(hào)： IDT7016S35GB
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
中文描述： 16K X 9 DUAL-PORT SRAM, 35 ns, CPGA68
封裝： CERAMIC, PGA-68
文件頁(yè)數(shù)： 2/20頁(yè)
文件大小： 262K
代理商： IDT7016S35GB
6.13
2
IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
Left Port
CE
L
R/
W
L
OE
L
A
0L
– A
13L
I/O
0L
– I/O
8L
SEM
L
INT
L
BUSY
L
Right Port
CE
R
R/
W
R
OE
R
A
0R
– A
13R
I/O
0R
– I/O
8R
SEM
R
INT
R
BUSY
R
Names
Chip Enable
Read/Write Enable
Output Enable
Address
Data Input/Output
Semaphore Enable
Interrupt Flag
Busy Flag
Master or Slave Select
Power
Ground
M/
S
V
CC
GND
Using the IDT MASTER/SLAVE Dual-Port RAM approach in
18-bit or wider memory system applications results in full-
speed, error-free operation without the need for additional
discrete logic.
This device provides two independent ports with separate
control, address, and I/O pins that permit independent,
asynchronous access for reads or writes to any location in
memory. An automatic power down feature controlled by
CE
permits the on-chip circuitry of each port to enter a very low
standby power mode.
Fabricated using IDT’s CMOS high-performance technol-
ogy, these devices typically operate on only 750mW of power.
The IDT7016 is packaged in a ceramic 68-pin PGA, a 64-
pin PLCC and an 80-pin TQFP (Thin Quad FlatPack). Military
grade product is manufactured in compliance with the latest
revision of MIL-STD-883, Class B, making it ideally suited to
military temperature applications demanding the highest level
of performance and reliability.
PIN CONFIGURATIONS
(1,2)
NOTES:
1. All V
CC
pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. This text does not imply orientation of Part-Mark.
PIN NAMES
3190 tbl 01
3190 drw 02
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
INDEX
9
8
7
6
5
4
3
2
1 68 67 66 65
27 28 29 30 31 32 33 34 35 36 37 38 39
V
C
V
CC
GND
I/O
0R
I/O
1R
I/O
2R
V
CC
I/O
3R
I/O
4R
I/O
5R
I/O
6R
INT
L
BUSY
L
GND
GND
I/O
6L
I/O
7L
A
4L
A
3L
A
2L
A
1L
A
0L
A
3R
A
4R
A
0R
A
1R
A
2R
I/O
2L
I/O
3L
I/O
4L
I/O
5L
A
5L
11
10
M/
S
BUSY
R
INT
R
40 41 42 43
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
59
60
64 63 62 61
A
1
I
7
I
8
G
O
R
R
W
R
S
R
C
R
O
L
C
L
I
8
I
0
I
1
IDT7016
J68-1
PLCC
TOP VIEW(3)
N
A
1
N
A
1
A
1
A
9
A
8
A
7
A
6
A
5
A
1
A
1
A
9
A
8
A
7
A
6
A
1
S
L
R
W
L
A
1
相關(guān)PDF資料
PDF描述
IDT7016S35J Low-Noise JFET-Input General-Purpose Operational Amplifier 8-SOIC -40 to 85
IDT7016S35JB Low-Noise JFET-Input General-Purpose Operational Amplifier 8-SOIC -40 to 85
IDT7016S35PF Low-Noise JFET-Input General-Purpose Operational Amplifier 8-SOIC -40 to 85
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7016S35GG 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM
IDT7016S35GGB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM
IDT7016S35GGI 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM
IDT7016S35J 功能描述:IC SRAM 144KBIT 35NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，異步 存儲(chǔ)容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF
IDT7016S35J8 功能描述:IC SRAM 144KBIT 35NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，異步 存儲(chǔ)容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF
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