參數(shù)資料
型號： IDT7024S15FB
廠商： Integrated Device Technology, Inc.
英文描述： HIGH-SPEED 4K x 16 DUAL-PORT STATIC RAM
中文描述： 高速4K的× 16 DUAL-PORT靜態(tài)RAM
文件頁數(shù)： 4/20頁
文件大?。?/td> 292K
代理商： IDT7024S15FB
6.15
4
IDT7024S/L
HIGH-SPEED 4K x 16 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
Commercial
Military
Unit
V
TERM
(2)
Terminal Voltage –0.5 to +7.0
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
DC Output
Current
–0.5 to +7.0
V
T
A
0 to +70
–55 to +125
°
C
T
BIAS
–55 to +125
–65 to +135
°
C
T
STG
–55 to +125
–65 to +150
°
C
I
OUT
50
50
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. V
TERM
must not exceed Vcc +0.5V for more than 25% of the cycle time or
10ns maximum, and is limited to < 20ma for the period over V
TERM >
Vcc
+ 0.5V
.
2740 tbl 05
TRUTH TABLE I – NON-CONTENTION READ/WRITE CONTROL
Inputs
(1)
CE
R/
W
OE
UB
LB
H
X
X
X
X
X
X
X
H
H
L
L
X
L
H
L
L
X
H
L
L
L
X
L
L
L
H
L
L
H
L
H
L
H
L
L
H
L
L
L
X
X
H
X
X
Outputs
I/O
8-15
High-Z
High-Z
DATA
IN
High-Z
DATA
IN
DATA
OUT
High-Z
DATA
OUT
DATA
OUT
Read Both Bytes
High-Z
High-Z
SEM
I/O
0-7
High-Z
High-Z
High-Z
DATA
IN
DATA
IN
High-Z
DATA
OUT
Read Lower Byte Only
Mode
H
H
H
H
H
H
H
H
X
Deselected: Power-Down
Both Bytes Deselected
Write to Upper Byte Only
Write to Lower Byte Only
Write to Both Bytes
Read Upper Byte Only
Outputs Disabled
NOTE:
1. A
0L
— A
11L
are not equal to A
0R
— A
11R.
2740 tbl 03
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
Parameter
V
CC
Supply Voltage
GND
Supply Voltage
Min.
4.5
0
Typ.
5.0
0
Max.
5.5
0
Unit
V
V
V
IH
Input High Voltage
2.2
—
6.0
(2)
V
V
IL
Input Low Voltage
–0.5
(1)
—
0.8
V
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 0.5V.
2740 tbl 06
Symbol
C
IN
C
OUT
NOTES:
1. This parameter are determined by device characterization, but is
not
production tested.
2. 3dV references the interpolated capacitance when the input and output
signals switch from 0V to 3V or from 3V to 0V.
Parameter
Input Capacitance
Output Capacitance
Condition
(2)
V
IN
= 3dV
V
OUT
= 3dV
Max.
9
10
Unit
pF
pF
2740 tbl 07
CAPACITANCE
(1)
(T
A
= +25
°
C, F = 1.0MHZ) TQFP ONLY
TRUTH TABLE II – SEMAPHORE READ/WRITE CONTROL
(1)
Inputs
CE
R/
W
OE
UB
LB
H
H
L
X
X
X
H
L
H
H
H
u
X
X
X
X
u
X
H
H
L
X
X
L
X
L
X
X
X
Outputs
I/O
8-15
DATA
OUT
DATA
OUT
Read Semaphore Flag Data Out
DATA
OUT
DATA
OUT
Read Semaphore Flag Data Out
DATA
IN
DATA
IN
Write I/O
0
into Semaphore Flag
DATA
IN
DATA
IN
Write I/O
0
into Semaphore Flag
—
—
Not Allowed
—
—
Not Allowed
SEM
I/O
0-7
Mode
L
L
L
L
L
L
L
2740 tbl 04
NOTE:
1. There are eight semaphore flags written to via I/O
0
and read from all of the I/O's (I/O
0
- I/O
15
). These eight semaphores are addressed by A
0
- A
2
.
相關PDF資料
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IDT7024L15FB HIGH-SPEED 4K x 16 DUAL-PORT STATIC RAM
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IDT7024L15F HIGH-SPEED 4K x 16 DUAL-PORT STATIC RAM
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