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| 型號(hào)： | IDT7025L55JB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM |
| 中文描述： | 8K X 16 DUAL-PORT SRAM, 55 ns, PQCC84 |
| 封裝： | PLASTIC, LCC-84 |
| 文件頁(yè)數(shù)： | 5/20頁(yè) |
| 文件大小： | 294K |
| 代理商： | IDT7025L55JB |
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IDT7025S/L
HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.16
5
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(V
CC
= 5.0V
±
10%)
IDT7025S
Min.
—
IDT7025L
Min.
—
Symbol
|I
LI
|
Parameter
Test Conditions
V
CC
= 5.5V, V
IN
= 0V to V
CC
Max.
10
Max.
5
Unit
μ
A
μ
A
V
V
Input Leakage Current
(1)
|I
LO
|
V
OL
V
OH
Output Leakage Current
Output Low Voltage
Output High Voltage
CE
= V
IH
, V
OUT
= 0V to V
CC
I
OL
= 4mA
I
OH
= -4mA
—
—
2.4
10
0.4
—
—
—
2.4
5
0.4
—
2683 tbl 08
NOTES:
1. "X" in part numbers indicates power rating (S or L).
2. V
CC
= 5V, T
A
= +25
°
C, and are not production tested. Icc dc
=
120mA (typ.)
3. At f = f
MAX
,
address and I/O'
S
are cycling at the maximum frequency read cycle of 1/ t
RC
, and using “AC Test Conditions” of input levels of GND to 3V.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
2683 tbl 09
NOTE:
1. At Vcc < 2.0V input leakages are undefined.
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(1)
(V
CC
= 5.0V
±
10%)
7025X15
Com'l. Only
7025X17
Com'l. Only
Typ.
(2)
Max. Typ.
(2)
Max. Typ.
(2)
Max. Unit
—
—
160
370
—
—
160
320
170
310
160
290
170
260
160
240
7025X20
7025X25
Test
Symbol
I
CC
Dynamic Operating
Current
(Both Ports Active)
Parameter
Condition
Version Typ.
(2)
Max.
MIL
S
L
COM S
L
CE
"A"
=V
IL
, Outputs Open
SEM
= V
IH
f = f
MAX(3)
—
—
170
170
—
—
310
260
155
155
155
155
340 mA
280
265
220
I
SB1
Standby Current
CE
R
=
CE
L
= V
IH
(Both Ports — TTL
Level Inputs) f = f
MAX(3)
MIL
S
L
—
—
20
20
—
—
105
105
—
—
60
50
—
—
190
160
—
—
20
20
—
—
105
105
—
—
60
50
—
—
190
160
20
20
20
20
95
95
95
95
90
70
60
50
240
210
180
150
16
16
16
16
90
90
90
90
80
65
60
50
215 mA
180
170
140
mA
SEM
R
=
SEM
L
= V
IH
COM S
L
S
L
I
SB2
Standby Current
CE
"A"
=V
IL
and
CE
"B"
=V
IL(5)
(One Port — TTL Active Port Outputs Open
Level Inputs) f = f
MAX(3)
SEM
R
=
SEM
L
= V
IH
MIL
COM S
L
I
SB3
Full Standby Current Both Ports
CE
L
and
(Both Ports — All
CE
R
>V
CC
- 0.2V
CMOS Level Inputs) V
IN
> V
CC
- 0.2V or
MIL
S
L
—
—
1.0
0.2
—
—
15
5
—
—
1.0
0.2
—
—
15
5
1.0
0.2
1.0
0.2
30
10
15
5
1.0
0.2
1.0
0.2
30
10
15
5
mA
COM S
V
IN
< 0.2V, f = 0
(4)
L
SEM
R
=
SEM
L
> V
CC
- 0.2V
I
SB4
Full Standby Current
CE
"A"
< 0.2 and
(One Port — All
CMOS Level Inputs)
SEM
R
=
SEM
L
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V, Active Port
Outputs Open,
f = f
MAX(3)
MIL
S
L
—
—
—
—
—
—
—
—
90
90
225
200
85
85
200 mA
170
CE
"B"
> V
CC
- 0.2V
(5)
COM S
100
100
170
140
100
100
170
140
90
90
155
130
85
85
145
120
L
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