參數(shù)資料
型號: IDT70261L25PFI
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM WITH INTERRUPT
中文描述: 16K X 16 DUAL-PORT SRAM, 25 ns, PQFP100
封裝: 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100
文件頁數(shù): 8/19頁
文件大?。?/td> 171K
代理商: IDT70261L25PFI
6.42
IDT70261S/L
High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges
8
,&3,
&#'#()##*+
5!
NOTES:
1. Transition is measured 0mV fromLow or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM
CE
= V
IL
and
SEM
= V
IH
. To access semaphore,
CE
= V
IH
and
SEM
= V
IL
. Either condition must be valid for the entire t
EW
time.
4. The specification for t
DH
must be met by the device supplying write data to the RAMunder all operating conditions. Although t
DH
and t
OW
values will vary over voltage
and temperature, the actual t
DH
will always be smaller than the actual t
OW
.
5. 'X' in part numbers indicates power rating (S or L).
Symbol
Parameter
70261X15
Com'l Only
70261X20
Com'l & Ind
70261X25
Com'l & Ind
Unit
Mn.
Max.
Mn.
Max.
Mn.
Max.
WRITE CYCLE
t
WC
Write Cycle Time
15
____
20
____
25
____
ns
t
EW
Chip Enable to End-of-Write
(3)
12
____
15
____
20
____
ns
t
AW
Address Valid to End-of-Write
12
____
15
____
20
____
ns
t
AS
Address Set-up Time
(3)
0
____
0
____
0
____
ns
t
WP
Write Pulse Width
12
____
15
____
20
____
ns
t
WR
Write Recovery Time
0
____
0
____
0
____
ns
t
DW
Data Valid to End-of-Write
10
____
15
____
15
____
ns
t
HZ
Output High-Z Time
(1,2)
____
10
____
12
____
15
ns
t
DH
Data Hold Time
(4)
0
____
0
____
0
____
ns
t
WZ
Write Enable to Output in High-Z
(1,2)
____
10
____
12
____
15
ns
t
OW
Output Active fromEnd-of-Write
(1,2,4)
0
____
0
____
0
____
ns
t
SWRD
Flag Write to Read Time
5
____
5
____
5
____
ns
t
SPS
Flag Contention Window
5
____
5
____
5
____
ns
3039 tbl 13a
Symbol
Parameter
70261X35
Com'l & Ind
70261X55
Com'l & Ind
Unit
Mn.
Max.
Mn.
Max.
WRITE CYCLE
t
WC
Write Cycle Time
35
____
55
____
ns
t
EW
Chip Enable to End-of-Write
(3)
30
____
45
____
ns
t
AW
Address Valid to End-of-Write
30
____
45
____
ns
t
AS
Address Set-up Time
(3)
0
____
0
____
ns
t
WP
Write Pulse Width
25
____
40
____
ns
t
WR
Write Recovery Time
0
____
0
____
ns
t
DW
Data Valid to End-of-Write
15
____
30
____
ns
t
HZ
Output High-Z Time
(1,2)
____
15
____
25
ns
t
DH
Data Hold Time
(4)
0
____
0
____
ns
t
WZ
Write Enable to Output in High-Z
(1,2)
____
15
____
25
ns
t
OW
Output Active fromEnd-of-Write
(1,2,4)
0
____
0
____
ns
t
SWRD
Flag Write to Read Time
5
____
5
____
ns
t
SPS
Flag Contention Window
5
____
5
____
ns
3039 tbl 13b
相關(guān)PDF資料
PDF描述
IDT70261L35PF HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM WITH INTERRUPT
IDT70261L35PFI 250V N-Channel MOSFET
IDT70261L55PF HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM WITH INTERRUPT
IDT70261L55PFI HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM WITH INTERRUPT
IDT70261S HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM WITH INTERRUPT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT70261L35PF 功能描述:IC SRAM 256KBIT 35NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,同步 存儲容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT70261L35PF8 功能描述:IC SRAM 256KBIT 35NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,異步 存儲容量:128K(8K x 16) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:70V25S15PF
IDT70261L55PF 功能描述:IC SRAM 256KBIT 55NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,同步 存儲容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT70261L55PF8 功能描述:IC SRAM 256KBIT 55NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,異步 存儲容量:128K(8K x 16) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:70V25S15PF
IDT70261S15PF 功能描述:IC SRAM 256KBIT 15NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,同步 存儲容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8