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| 型號： | IDT7026L55G |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM |
| 中文描述： | 16K X 16 DUAL-PORT SRAM, 55 ns, CPGA84 |
| 封裝： | CERAMIC, PGA-84 |
| 文件頁數(shù)： | 4/18頁 |
| 文件大小： | 239K |
| 代理商： | IDT7026L55G |
6.17
4
IDT7026S/L
HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
RECOMMENDED DC OPERATING
CONDTIONS
Symbol
Parameter
V
CC
Supply Voltage
GND
Supply Voltage
Min.
4.5
0
Typ.
5.0
0
Max.
5.5
0
Unit
V
V
V
IH
Input High Voltage
2.2
—
6.0
(2)
V
V
IL
Input Low Voltage
–0.5
(1)
—
0.8
V
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 0.5V.
2939 tbl 06
CAPACITANCE
(1)
(T
A
= +25
°
C, f = 1.0MHz)
Symbol
Parameter
C
IN
Input Capacitance
C
OUT
Output
Capacitance
Conditions
(2)
Max.
V
IN
= 3dv
V
OUT
= 3dv
Unit
pF
pF
9
10
NOTES:
1. This parameter is determined by device characterization but is not
production tested.
2. 3dV represents the interpolated capacitance when the input and output
signals switch from 0V to 3V or from 3V to 0V.
2939 tbl 07
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
Commercial
Military
Unit
V
TERM
(2)
Terminal Voltage –0.5 to +7.0
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
DC Output
Current
–0.5 to +7.0
V
T
A
0 to +70
–55 to +125
°
C
T
BIAS
–55 to +125
–65 to +135
°
C
T
STG
–55 to +125
–65 to +150
°
C
I
OUT
50
50
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. V
TERM
must not exceed Vcc + 0.5V for more than 25% of the cycle time
or 10ns maximum, and is limited to < 20mA for the period of V
TERM
> Vcc
+ 0.5V.
2939 tbl 05
TRUTH TABLE I – NON-CONTENTION READ/WRITE CONTROL
Inputs
(1)
CE
R/
W
OE
UB
LB
H
X
X
X
X
X
X
X
H
H
L
L
X
L
H
L
L
X
H
L
L
L
X
L
L
L
H
L
L
H
L
H
L
H
L
L
H
L
L
L
X
X
H
X
X
Outputs
I/O
8-15
High-Z
High-Z
DATA
IN
High-Z
DATA
IN
DATA
OUT
High-Z
DATA
OUT
DATA
OUT
Read Both Bytes
High-Z
High-Z
SEM
I/O
0-7
High-Z
High-Z
High-Z
DATA
IN
DATA
IN
High-Z
DATA
OUT
Read Lower Byte Only
Mode
H
H
H
H
H
H
H
H
X
Deselected: Power-Down
Both Bytes Deselected
Write to Upper Byte Only
Write to Lower Byte Only
Write to Both Bytes
Read Upper Byte Only
Outputs Disabled
NOTE:
1. A
0L
— A
13L
≠
A
0R
— A
13R.
TRUTH TABLE II – SEMAPHORE READ/WRITE CONTROL
(1)
Inputs
CE
R/
W
OE
UB
LB
H
H
L
X
X
X
H
L
H
H
H
X
X
X
2939 tbl 03
Outputs
I/O
8-15
DATA
OUT
DATA
OUT
Read Data in Semaphore Flag
DATA
OUT
DATA
OUT
Read Data in Semaphore Flag
DATA
IN
DATA
IN
Write I/O
0
into Semaphore Flag
SEM
I/O
0-7
Mode
L
L
L
X
L
L
X
X
X
H
L
X
H
X
L
L
L
L
DATA
IN
—
—
DATA
IN
—
—
Write I/O
0
into Semaphore Flag
Not Allowed
Not Allowed
X
X
2939 tbl 04
NOTE:
1. There are eight semaphore flags written to via I/O
0
and read from all I/O's (I/O
0
-I/O
15
). These eight semaphores are addressed by A
0
- A
2
.
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