參數(shù)資料
型號: IDT70824L20PFI
廠商: Integrated Device Technology, Inc.
英文描述: HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)
中文描述: 高速4K的× 16順序訪問隨機存取存儲器(單存取RAM⑩)
文件頁數(shù): 21/21頁
文件大小: 205K
代理商: IDT70824L20PFI
6.42
IDT70824S/L
High-Speed 4K x 16 Sequential Access Random Access Memory Military and Commercial Temperature Ranges
3#
NOTE:
1. Industrial temperature range is available on selected TQFP packages in standard power.
For specific speeds, packages and powers contact your sales office.
3099 drw 27
X
Power
XX
Speed
X
Package
X
Process/
Temperature
Range
Blank
I
(1)
B
Commercial (0
°
C to +70
°
C)
Industrial (-40
°
C to +85
°
C)
Military (–55
°
C to +125
°
C)
Compliant to MIL-PRF-38535 QML
84-pin PGA (G84-3)
80-pin TQFP (PN80-1)
G
PF
20
25
35
45
S
L
Standard Power
Low Power
70824
Device
Type
64K (4K x 16) Sequential Access Random Access
Memory
70824
IDT
Speed in nanoseconds
Commercial Only
Commercial Only
Commercial & Military
Commercial & Military
CORPORATE HEADQUARTERS
2975 Stender Way
Santa Clara, CA 95054
for SALES:
800-345-7015 or 408-727-6166
fax: 408-492-8674
www.idt.com
for Tech Support:
831-754-4613
DualPortHelp@idt.com
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
/;2
3/8/99:
Initiated datasheet document history
Converted to new format
Cosmetic and typographical corrections
Page 2 Added additional notes to pin configurations
Changed drawing format
Replaced IDT logo
Page 3 Added "Outputs" in Sequential pin description table
Changed ±200mV to 0mV in notes
6/4/99:
11/10/99:
4/18/00:
相關(guān)PDF資料
PDF描述
IDT70824L25GI HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)
IDT70824L25PFI HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)
IDT70824L35GI HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)
IDT70824L35PFI HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)
IDT70824L45GI HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)
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IDT70824L25G 功能描述:IC SARAM 64KBIT 25NS 84PGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步,DDR II 存儲容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
IDT70824L25PF 功能描述:IC SARAM 64KBIT 25NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步,DDR II 存儲容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
IDT70824L25PF8 功能描述:IC SARAM 64KBIT 25NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步,DDR II 存儲容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
IDT70824L25PFI 功能描述:IC SARAM 64KBIT 25NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步,DDR II 存儲容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
IDT70824L25PFI8 功能描述:IC SARAM 64KBIT 25NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步,DDR II 存儲容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ