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參數(shù)資料
| 型號： | IDT70824S20G |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩) |
| 中文描述： | 4K X 16 STANDARD SRAM, 20 ns, CPGA84 |
| 封裝： | PGA-84 |
| 文件頁數(shù)： | 9/21頁 |
| 文件大?。?/td> | 205K |
| 代理商： | IDT70824S20G |
6.42
IDT70824S/L
High-Speed 4K x 16 Sequential Access Random Access Memory Military and Commercial Temperature Ranges
RST
!
Setting
RST
LOW resets the control state of the SARAM
RST
functions
asynchronously of SCLK (i.e. not registered). The default states after a
reset operation are displayed in the adjacent chart.
,">'#
Within the SARAM the user can designate one of two buffer flow modes
for each buffer. Each buffer flow mode defines a unique set of actions for
the sequential port address pointer and
EOB
flags. In BUFFER CHAIN-
ING mode, after the address pointer reaches the end of the buffer, it sets
the corresponding
EOB
flag and continues fromthe start address of the
other buffer. In STOP mode, the address pointer stops incrementing after
it reaches the end of the buffer. There is no linear or mask mode available.
//C"$#5#
!
also allows reading and clearing the status of the
EOB
flags. Seven different
CMD
cases are available depending on the conditions of A
0
-A
2
and R/
W. Address bits A
3
-A
11
and data I/O bits I/O
12
-I/O
15
are not used during
this operation.
NOTE:
1. Start address and End of address for Buffer #2 and the Flow Control for
both Buffer #1 and #2, must be programmed as described in the "Buffer
Command Mode" section.
#'#
Buffer Command Mode (
CMD
) allows the randomaccess port to
control the state of the two buffers. Address pins A
0
-A
2
and I/O pins I/O
0
-
I/O
11
are used to access the start of buffer and the end of buffer addresses
and to set the flow control mode of each buffer. The Buffer Command Mode
CMD
!
#
CMD
'#
!
NOTES:
1. "H" = V
OH
for I/O in the output state and "Don't Cares" for I/O in the input state. "L" = V
IL
for I/O in the input state.
2. A write into the buffer occurs when R/
W
= V
IL
and a read when R/
W
= V
IH
.
EOB
1
/
SOB
1
and
EOB
2
/
SOB
2
are chosen through address A
0
-A
2
while
CMD
= V
IL
and
CE
= V
IH
.
NOTE:
1. R/
W
input "0(1)" indicates a write(0) or read(1) occurring with the same address input.
Register
Contents
Address
0
EOB
Flags
Cleared to HIGH state
Buffer FlowMode
BUFFER CHAINING
Start Address Buffer #1
0 (1)
End Address Buffer #1
4095 (4K)
Start Address Buffer #2
(1)
Cleared (set at invalid points)
End Address Buffer #2
(1)
Cleared (set at invalid points)
Registered State
SCE
= V
IH
, SR/
W
= V
IL
3099 tbl 15
Case #
A
2
-A
0
R/
W
DESCRIPTIONS
1
000
0 (1)
Write (read) the start address of Buffer #1 through I/O
0
-I/O
11
.
2
001
0 (1)
Write (read) the end address of Buffer #1 through I/O
0
-I/O
11
.
3
010
0 (1)
Write (read) the start address of Buffer #2 through I/O
0
-I/O
11
.
4
011
0 (1)
Write (read) the end address of Buffer #2 through I/O
0
-I/O
11
.
5
100
0 (1)
Write (read) flowcontrol register
6
101
0
Write only - clear
EOB
1
and/or
EOB
2
flag.
7
101
1
Read only - flag status register
8
110/111
(X)
(Reserved)
3099 tbl 16
15
MSB
LSB I/O BITS
3099 drw 10
H
H
11 --------------------------------------------------------------------------------------------------
Address Loaded into Buffer
0
14
13
H
L
12
相關(guān)PDF資料 |
PDF描述 |
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| IDT70824S20GB | HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩) |
| IDT70824S20PF | MCX PLUG R/A SEMI-RIGID, RG405 RoHS Compliant: Yes |
| IDT70824S20PFB | HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩) |
| IDT70824S25G | HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩) |
| IDT70824S25GB | HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩) |
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| IDT70824S20PF | 功能描述:IC SARAM 64KBIT 20NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT70824S20PF8 | 功能描述:IC SARAM 64KBIT 20NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT70824S25G | 功能描述:IC SARAM 64KBIT 25NS 84PGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT70824S25PF | 功能描述:IC SARAM 64KBIT 25NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT70824S25PF8 | 功能描述:IC SARAM 64KBIT 25NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
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