- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377273 > IDT70825S35G (INTEGRATED DEVICE TECHNOLOGY INC) Quad Low-Noise JFET-Input General-Purpose Operational Amplifier 14-PDIP 0 to 70 PDF資料下載
參數(shù)資料
| 型號(hào)： | IDT70825S35G |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | Quad Low-Noise JFET-Input General-Purpose Operational Amplifier 14-PDIP 0 to 70 |
| 中文描述： | 8K X 16 STANDARD SRAM, 35 ns, CPGA84 |
| 封裝： | PGA-84 |
| 文件頁數(shù)： | 1/21頁 |
| 文件大?。?/td> | 319K |
| 代理商： | IDT70825S35G |
Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
OCTOBER 1996
1996 Integrated Device Technology, Inc.
DSC-3016/6
HIGH-SPEED 8K x 16
SEQUENTIAL ACCESS
RANDOM ACCESS MEMORY (SARAM)
FEATURES:
8K x 16 Sequential Access Random Access Memory
(SARAM
)
- Sequential Access from one port and standard Random
Access from the other port
- Separate upper-byte and lower-byte control of the
Random Access Port
High-speed operation
- 20ns t
AA
for random access port
- 20ns t
CD
for sequential port
- 25ns clock cycle time
Architecture based on Dual-Port RAM cells
Electrostatic discharge > 2001V, Class II
Compatible with Intel BMIC and 82430 PCI Set
Width and Depth Expandable
Sequential side
- Address based flags for buffer control
- Pointer logic supports two internal buffers
Battery backup operation—2V data retention
TTL-compatible, single 5V (
±
10%) power supply
Available in 80-pin TQFP and 84-pin PGA
Military product compliant to MIL-STD-883.
Industrial temperature range (–40
°
C to +85
°
C) is available,
tested to military electrical specifications.
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION:
The IDT70825 is a high-speed 8K x 16-bit Sequential
Access Random Access Memory (SARAM). The SARAM
offers a single-chip solution to buffer data sequentially on one
port, and be accessed randomly (asynchronously) through
the other port. The device has a Dual-Port RAM based
architecture with a standard SRAM interface for the random
(asynchronous) access port, and a clocked interface with
counter sequencing for the sequential (synchronous) access
port.
Fabricated using CMOS high-performance technology,
this memory device typically operates on less than 900mW of
power at maximum high-speed clock-to-data and Random
Access. An automatic power down feature, controlled by
CE
,
permits the on-chip circuitry of each port to enter a very low
standby power mode.
The IDT70825 is packaged in a 80-pin Thin Plastic Quad
Flatpack (TQFP) or 84-pin Ceramic Pin Grid Array (PGA).
Military grade product is manufactured in compliance with the
latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
IDT70825S
/
L
The IDT logo is a registered trademark and SARAM is a trademark of Integrated Device Technology, Inc.
6.31
1
Random
Access
Port
Controls
Sequential
Access
Port
Controls
8K X 16
Memory
Array
Data
L
Data
R
Addr
L
Addr
R
I/O0-15
SI/O0-15
Pointer/
Counter
13
Start Address for Buffer #1
End Address for Buffer #1
Start Address for Buffer #2
End Address for Buffer #2
Flow Control Buffer
Flag Status
1
2
13
13
13
16
13
13
RST
COMPARATOR
A
0-12
13
R/
LSB
MSB
16
SCLK
2
SR/
1
16
13
3016 drw 01
Reg.
For latest information contact IDT’s web site at www.idt.com or fax-on-demand at 408-492-8391.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT70825S35GB | Quad Low-Noise JFET-Input General-Purpose Operational Amplifier 14-SO 0 to 70 |
| IDT70825S35PF | Quad Low-Noise JFET-Input General-Purpose Operational Amplifier 14-SO 0 to 70 |
| IDT70825S35PFB | Quad Low-Noise JFET-Input General-Purpose Operational Amplifier 14-SO 0 to 70 |
| IDT70825S45G | Quad Low-Noise JFET-Input General-Purpose Operational Amplifier 14-TSSOP 0 to 70 |
| IDT70825S45GB | Quad Low-Noise JFET-Input General-Purpose Operational Amplifier 14-TSSOP 0 to 70 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT70825S35PF | 功能描述:IC SARAM 128KBIT 35NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT70825S35PF8 | 功能描述:IC SARAM 128KBIT 35NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT709079L12PF | 功能描述:IC SRAM 256KBIT 12NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，同步 存儲(chǔ)容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT709079L12PF8 | 功能描述:IC SRAM 256KBIT 12NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，異步 存儲(chǔ)容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT709079L12PFI | 功能描述:IC SRAM 256KBIT 12NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，同步 存儲(chǔ)容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。