- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄353774 > IDT70T651S12BCI (INTEGRATED DEVICE TECHNOLOGY INC) JFET-Input Operational Amplifier 14-SOIC -40 to 85 PDF資料下載
參數(shù)資料
| 型號： | IDT70T651S12BCI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | JFET-Input Operational Amplifier 14-SOIC -40 to 85 |
| 中文描述： | 256K X 36 DUAL-PORT SRAM, 12 ns, PBGA256 |
| 封裝： | BGA-256 |
| 文件頁數(shù)： | 2/15頁 |
| 文件大?。?/td> | 190K |
| 代理商： | IDT70T651S12BCI |
6.42
IDT70V9379L
High-Speed 32K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
10
Timing Waveform of Pipelined Read-to-Write-to-Read (OE = VIL)(3)
Timing Waveform of Pipelined Read-to-Write-to-Read (OE Controlled)(3)
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
3.
CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = VIH. "NOP" is "No Operation".
4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for
reference use only.
5. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
R/W
ADDRESS
An
An +1
An + 2
An + 3
An + 4
DATAIN
Dn + 2
CE0
CLK
4857 drw 10
Qn
Qn + 3
DATAOUT
CE1
UB, LB
tCD2
tCKHZ
tCKLZ
tCD2
tSC
tHC
tSB
tHB
tSW tHW
tSA
tHA
tCH2
tCL2
tCYC2
READ
NOP
READ
tSD tHD
(4)
(2)
(1)
tSW tHW
WRITE
(5)
R/W
ADDRESS
An
An +1
An + 2
An + 3
An + 4
An + 5
DATAIN
Dn + 3
Dn + 2
CE0
CLK
4857 drw 11
DATAOUT
Qn
Qn + 4
CE1
UB, LB
OE
tCH2
tCL2
tCYC2
tCKLZ(1)
tCD2
tOHZ(1)
tCD2
tSD tHD
READ
WRITE
READ
tSC
tHC
tSB
tHB
tSW tHW
tSA
tHA
(4)
(2)
tSW tHW
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT70T651S12BF | JFET-Input Operational Amplifier 14-SOIC -40 to 85 |
| IDT70T651S12BFI | JFET-Input Operational Amplifier 14-SOIC -40 to 85 |
| IDT70T651S12DR | JFET-Input Operational Amplifier 14-SOIC -40 to 85 |
| IDT70T651S12DRI | JFET-Input Operational Amplifier 14-SOIC -40 to 85 |
| IDT70T651S15BC | JFET-Input Operational Amplifier 14-SOIC -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT70T651S12BCI8 | 功能描述:IC SRAM 9MBIT 12NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70T651S12BF | 功能描述:IC SRAM 9MBIT 12NS 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70T651S12BF8 | 功能描述:IC SRAM 9MBIT 12NS 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70T651S12BFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 9MBIT 12NS 208FPBGA |
| IDT70T651S12BFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 9MBIT 12NS 208FPBGA |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。