- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377282 > IDT70V24L35G (INTEGRATED DEVICE TECHNOLOGY INC) HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM PDF資料下載
參數(shù)資料
| 型號： | IDT70V24L35G |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM |
| 中文描述： | 4K X 16 DUAL-PORT SRAM, 35 ns, CPGA84 |
| 封裝： | 1.120 X 1.120 INCH, 0.160 INCH HEIGHT, CERAMIC, PGA-84 |
| 文件頁數(shù)： | 8/17頁 |
| 文件大?。?/td> | 281K |
| 代理商： | IDT70V24L35G |
6.38
8
IDT70V24S/L
HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM
COMMERCIAL TEMPERATURE RANGE
TIMING WAVEFORM OF WRITE CYCLE NO. 1, R/
W
CONTROLLED TIMING
(1,5,8)
R/
W
t
WC
t
HZ
t
AW
t
WR
t
AS
t
WP
DATA
OUT
(2)
t
WZ
t
DW
t
DH
t
OW
OE
ADDRESS
DATA
IN
(6)
(4)
(4)
(7)
UB
or
LB
2911 drw 08
(9)
CE
or
SEM
(9)
(7)
(3)
TIMING WAVEFORM OF WRITE CYCLE NO. 2,
CE
,
UB
,
LB
CONTROLLED TIMING
(1,5)
2911 drw 09
t
WC
t
AS
t
WR
t
DW
t
DH
ADDRESS
DATA
IN
R/
W
t
AW
t
EW
UB
or
LB
(3)
(2)
(6)
CE
or
SEM
(9)
(9)
NOTES:
1. R/
W
or
CE
or
UB
&
LB
must be High during all address transitions.
2. A write occurs during the overlap (t
EW
or t
WP
) of a Low
UB
or
LB
and a Low
CE
and a Low R/
W
for memory array writing cycle.
3. t
WR
is measured from the earlier of
CE
or R/
W
(or
SEM
or R/
W
) going High to the end of write cycle.
4. During this period, the I/O pins are in the output state and input signals must not be applied.
5. If the
CE
or
SEM
Low transition occurs simultaneously with or after the R/
W
low transition, the outputs remain in the High-impedance state.
6. Timing depends on which enable signal is asserted last,
CE
, R/
W
or byte control.
7. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured
±
200mV from Low or High-impedance voltage
with Output Test Load (Figure 2).
8. If
OE
is Low during R/
W
controlled write cycle, the write pulse width must be the larger of t
WP
or (t
WZ
+ t
DW
) to allow the I/O drivers to turn off and data
to be placed on the bus for the required t
DW
. If
OE
is High during an R/
W
controlled write cycle, this requirement does not apply and the write pulse can
be as short as the specified t
WP
.
9. To access RAM,
CE
= V
IL
,
UB
or
LB
= V
IL
,
SEM
= V
IH
. To access semaphore,
CE
= V
IH
and
SEM
= V
IL
. Either condition must be valid for the entire t
EW
time.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT70V24L35J | HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM |
| IDT70V24L35PF | HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM |
| IDT70V24L55G | HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM |
| IDT70V24L55J | HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM |
| IDT70V24L55PF | HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT70V24L35J | 功能描述:IC SRAM 64KBIT 35NS 84PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT70V24L35J8 | 功能描述:IC SRAM 64KBIT 35NS 84PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT70V24L35PF | 功能描述:IC SRAM 64KBIT 35NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT70V24L35PF8 | 功能描述:IC SRAM 64KBIT 35NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT70V24L35PFG | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 35NS 100TQFP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。