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| 型號： | IDT70V24S55PF |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM |
| 中文描述： | 4K X 16 DUAL-PORT SRAM, 55 ns, PQFP100 |
| 封裝： | 14 X 14 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 |
| 文件頁數(shù)： | 5/17頁 |
| 文件大?。?/td> | 281K |
| 代理商： | IDT70V24S55PF |
6.38
5
IDT70V24S/L
HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM
COMMERCIAL TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(1)
(V
CC
= 3.3V
±
0.3V)
70V24X25
70V24X35
70V24X55
Test
Symbol
I
CC
Parameter
Condition
Version
COM.
Typ.
(2)
80
80
Max.
140
120
Typ.
(2)
70
70
Max. Typ.
(2)
Max. Unit
115
70
100
70
Dynamic Operating
Current
(Both Ports Active)
CE
= V
IL
, Outputs Open
SEM
= V
IH
f = f
MAX(3)
S
L
115 mA
100
I
SB1
Standby Current
(Both Ports — TTL
Level Inputs)
CE
R
=
CE
L
= V
IH
SEM
R
=
SEM
L
= V
IH
f = f
MAX(3)
COM.
S
L
12
10
25
20
10
8
25
20
10
8
25
20
mA
I
SB2
Standby Current
(One Port — TTL
Level Inputs)
CE
"A"
=V
IL and
CE
"B"
=V
IH(5)
Active Port Outputs Open
f = f
MAX(3)
SEM
R
=
SEM
L
= V
IH
COM.
S
L
40
40
82
72
35
35
72
62
35
35
72
62
mA
I
SB3
Full Standby Current
(Both Ports — All
CMOS Level Inputs)
Both Ports
CE
L
and
CE
R
>V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V, f = 0
(4)
SEM
R
=
SEM
L
> V
CC
-0.2V
COM.
S
L
1.0
0.2
5
1.0
0.2
5
1.0
0.2
5
mA
2.5
2.5
2.5
I
SB4
Full Standby Current
(One Port — All
CMOS Level Inputs)
CE
"A"
< 0.2 and
CE
"B"
> V
CC
- 0.2V
(5)
SEM
R
=
SEM
L
> V
CC
-0.2V
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V, Active Port
Outputs Open,
f = f
MAX(3)
COM.
S
L
50
50
81
71
45
45
71
61
45
45
71
61
mA
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(V
CC
= 3.3V
±
0.3V)
IDT70V24S
Min.
—
IDT70V24L
Min.
—
Symbol
|I
LI
|
Parameter
Test Conditions
V
CC
= 3.6V, V
IN
= 0V to V
CC
Max.
10
Max.
5
Unit
μ
A
μ
A
V
V
Input Leakage Current
(1)
|I
LO
|
V
OL
V
OH
Output Leakage Current
Output Low Voltage
Output High Voltage
CE
= V
IH
, V
OUT
= 0V to V
CC
I
OL
= 4mA
I
OH
= -4mA
—
—
2.4
10
0.4
—
—
—
2.4
5
0.4
—
2911 tbl 08
NOTES:
1. "X" in part numbers indicates power rating (S or L).
2. V
CC
= 3.3V, T
A
= +25
°
C, and are not production tested. I
CC DC
= 70mA (typ.)
3. At f = f
MAX
,
address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/ t
RC
, and using “AC Test Conditions”
of input levels of GND to 3V.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
2911 tbl 09
NOTE:
1. At Vcc
≤
2.0V input leakages are undefined.
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| IDT70V24S55PF8 | 功能描述:IC SRAM 64KBIT 55NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT70V24S55PFG | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 55NS 100TQFP |
| IDT70V24S55PFG8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 55NS 100TQFP |
| IDT70V25L15J | 功能描述:IC SRAM 128KBIT 15NS 84PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT70V25L15J8 | 功能描述:IC SRAM 128KBIT 15NS 84PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
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