- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377283 > IDT70V25L55J (INTEGRATED DEVICE TECHNOLOGY INC) HIGH-SPEED 3.3V 8K x 16 DUAL-PORT STATIC RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | IDT70V25L55J |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 3.3V 8K x 16 DUAL-PORT STATIC RAM |
| 中文描述： | 8K X 16 DUAL-PORT SRAM, 55 ns, PQCC84 |
| 封裝： | 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-84 |
| 文件頁數(shù)： | 10/17頁 |
| 文件大?。?/td> | 276K |
| 代理商： | IDT70V25L55J |
6.39
10
IDT70V25S/L
HIGH-SPEED 3.3V 8K x 16 DUAL-PORT STATIC RAM
COMMERCIAL TEMPERATURE RANGE
BUSY TIMING (M/
S
= V
IL
)
t
WB
t
WH
PORT-TO-PORT DELAY TIMING
t
WDD
Write Pulse to Data Delay
(1)
Write Data Valid to Read Data Delay
(1)
BUSY
Input to Write
(4)
Write Hold After
BUSY
(5)
0
20
—
—
0
25
—
—
0
—
—
ns
ns
25
—
55
—
60
—
80
ns
t
DDD
—
50
—
55
—
75
ns
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(6)
IDT70V25X25
Min.
IDT70V25X35
Min.
IDT70V25X55
Min.
Symbol
BUSY TIMING (M/
S
= V
IH
)
t
BAA
t
BDA
t
BAC
t
BDC
Parameter
Max.
Max.
Max.
Unit
BUSY
Access Time from Address Match
BUSY
Disable Time from Address Not Matched
BUSY
Access Time from Chip Low
BUSY
Disable Time from Chip High
Arbitration Priority Set-up Time
(2)
BUSY
Disable to Valid Data
(3)
Write Hold After
BUSY
(5)
—
—
—
—
25
25
25
25
—
—
—
—
35
35
35
35
—
—
—
—
45
45
45
45
ns
ns
ns
ns
t
APS
5
—
5
—
5
—
ns
t
BDD
t
WH
—
20
35
—
—
25
35
—
—
25
45
—
ns
ns
TIMING WAVEFORM OF WRITE PORT-TO-PORT READ AND
BUSY
(M/
S
= V
IH
)
(2,4,5)
2944 drw 12
t
DW
t
APS
ADDR
"A"
t
WC
DATA
OUT "B"
MATCH
t
WP
R/
W
"A"
DATA
IN "A"
ADDR
"B"
t
DH
VALID
(1)
MATCH
BUSY
"B"
t
BDA
VALID
t
BDD
t
DDD(3)
t
WDD
t
BAA
2944 tbl 14
NOTES:
1. Port-to-port delay through RAM cells from writing port to reading port, refer to "TIMING WAVEFORM OF WRITE PORT-TO-PORT READ AND
BUSY
(M/
S
= V
IH
)".
2. To ensure that the earlier of the two ports wins.
3. t
BDD
is a calculated parameter and is the greater of 0, t
WDD
– t
WP
(actual), or t
DDD
– t
DW
(actual).
4. To ensure that the write cycle is inhibited during contention.
5. To ensure that a write cycle is completed after contention.
6. "X" is part numbers indicates power rating (S or L).
NOTES:
1. To ensure that the earlier of the two ports wins. t
APS
is ignored for M/
S
= V
IL
(slave).
2.
CE
L
=
CE
R
= V
IL
.
3.
OE
= V
IL
for the reading port.
4. If M/
S
= V
IL
(slave),
BUSY
is an input. Then for this example
BUSY
"A"
= V
IH
and
BUSY
"B"
input is shown above.
5. All timing is the same for both left and right ports. Port "A" may be either the left or right Port. Port "B" is the port opposite from port "A".
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT70V25L55PF | HIGH-SPEED 3.3V 8K x 16 DUAL-PORT STATIC RAM |
| IDT70V25S35PF | HIGH-SPEED 3.3V 8K x 16 DUAL-PORT STATIC RAM |
| IDT70V25L25G | HIGH-SPEED 3.3V 8K x 16 DUAL-PORT STATIC RAM |
| IDT70V25L25J | HIGH-SPEED 3.3V 8K x 16 DUAL-PORT STATIC RAM |
| IDT70V25L25PF | HIGH-SPEED 3.3V 8K x 16 DUAL-PORT STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT70V25L55J8 | 功能描述:IC SRAM 128KBIT 55NS 84PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，異步 存儲(chǔ)容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT70V25L55PF | 功能描述:IC SRAM 128KBIT 55NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，異步 存儲(chǔ)容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT70V25L55PF8 | 功能描述:IC SRAM 128KBIT 55NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，異步 存儲(chǔ)容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT70V25S15J | 功能描述:IC SRAM 128KBIT 15NS 84PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，同步 存儲(chǔ)容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT70V25S15J8 | 功能描述:IC SRAM 128KBIT 15NS 84PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，異步 存儲(chǔ)容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。