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參數(shù)資料
| 型號： | IDT70V3389S4BFI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| 中文描述： | 64K X 18 DUAL-PORT SRAM, 4.2 ns, PBGA208 |
| 封裝： | FINE PITCH, BGA-208 |
| 文件頁數(shù)： | 15/17頁 |
| 文件大?。?/td> | 176K |
| 代理商： | IDT70V3389S4BFI |
6.42
IDT70V3389S
High-Speed 64K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges
The IDT70V3389 provides a true synchronous Dual-Port Static RAM
interface. Registered inputs provide mnimal set-up and hold times on
address, data, and all critical control inputs. All internal registers are clocked
on the rising edge of the clock signal, however, the self-timed internal write
pulse is independent of the LOW to HIGH transition of the clock signal.
An asynchronous output enable is provided to ease asyn-
chronous bus interfacing. Counter enable inputs are also provided to stall
the operation of the address counters for fast interleaved
memory applications.
A HIGH on
CE
0
or a LOW on CE
1
for one clock cycle will power down
the internal circuitry to reduce static power consumption. Multiple chip
enables allow easier banking of multiple IDT70V3389s for depth expan-
sion configurations. Two cycles are required with
CE
0
LOW and CE
1
HIGH to re-activate the outputs.
4832 drw 14
IDT70V3389
CE
0
CE
1
CE
1
CE
0
CE
0
CE
1
A
16
CE
1
CE
0
V
DD
V
DD
IDT70V3389
IDT70V3389
IDT70V3389
Control Inputs
Control Inputs
Control Inputs
Control Inputs
UB
,
LB
R/
W
,
OE
,
CLK,
ADS
,
CNTRST
,
CNTEN
.
'*,*'-4
The IDT70V3389 features dual chip enables (refer to Truth
Table I) in order to facilitate rapid and simple depth expansion with no
requirements for external logic. Figure 4 illustrates how to control the
various chip enables in order to expand two devices in depth.
The IDT70V3389 can also be used in applications requiring expanded
width, as indicated in Figure 4. Through combining the control signals, the
devices can be grouped as necessary to accommodate applications
needing 36-bits or wider.
Figure 4. Depth and Width Expansion with IDT70V3389
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT70V3389S4PRF | HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V3389S4PRFI | HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V3389S5BC | HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V3389S5BCI | HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V3389S5BF | HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT70V3389S4PRF | 功能描述:IC SRAM 1.125MBIT 4NS 128TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V3389S4PRF8 | 功能描述:IC SRAM 1.125MBIT 4NS 128TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V3389S5BC | 功能描述:IC SRAM 1.125MBIT 5NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V3389S5BC8 | 功能描述:IC SRAM 1.125MBIT 5NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT70V3389S5BCI | 功能描述:IC SRAM 1.125MBIT 5NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
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