參數(shù)資料
型號： IDT70V3389S6BFI
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
中文描述： 64K X 18 DUAL-PORT SRAM, 6 ns, PBGA208
封裝： FINE PITCH, BGA-208
文件頁數(shù)： 6/17頁
文件大?。?/td> 176K
代理商： IDT70V3389S6BFI
6.42
IDT70V3389S
High-Speed 64K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges
**/
&*012
#
(34
Symbol
#
&'&()**
#
NOTES:
1. "H" = V
IH,
"L" = V
IL,
"X" = Don't Care.
2. Read and write operations are controlled by the appropriate setting of R/
W
,
CE
0
, CE
1
,
BE
n and
OE
.
3. Outputs are in Pipelined mode: the data out will be delayed by one cycle.
4.
ADS
and
CNTRST
are independent of all other memory control signals including
CE
0
, CE
1
and
BE
n
5. The address counter advances if
CNTEN
= V
IL
on the rising edge of CLK, regardless of all other memory control signals including
CE
0
, CE
1
,
BE
n.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximumrating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed V
DD
+ 150mV for more than 25% of the cycle time or
4ns maximum and is limted to < 20mA for the period of V
TERM
> V
DD
+ 150mV.
NOTES:
1. Industrial temperature: for specific speeds, packages and powers contact your
sales office.
2. This is the parameter T
A
. This is the "instant on" case temperature.
Address
Previous
Address
Addr
Used
CLK
ADS
CNTEN
CNTRST
I/O
(3)
MODE
X
X
0
↑
X
X
L
(4)
D
I/O
(0)
Counter Reset to Address 0
An
X
An
↑
L
(4)
X
H
D
I/O
(n)
External Address Used
An
Ap
Ap
↑
H
H
H
D
I/O
(p)
External Address Blocked
—
Counter disabled (Ap reused)
X
Ap
Ap + 1
↑
H
L
(5)
H
D
I/O
(p+1)
Counter Enabled
—
Internal Address generation
4832 tbl 03
Grade
Ambient
Temperature
GND
V
DD
Commercial
0
O
C to +70
O
C
0V
3.3V
+
150mV
Industrial
-40
O
C to +85
O
C
0V
3.3V
+
150mV
4832 tbl 04
Symbol
Parameter
Mn.
Typ.
Max.
Unit
V
DD
Core Supply Voltage
3.15
3.3
3.45
V
V
DDQ
I/O Supply Voltage
(3)
2.375
2.5
2.625
V
V
SS
Ground
0
0
0
V
V
IH
Input High Voltage
(3)
(Address & Control Inputs)
1.7
____
V
DDQ
+ 125mV
(2)
V
V
IH
Input High Voltage - I/O
(3)
1.7
____
V
DDQ
+ 125mV
(2)
V
V
IL
Input LowVoltage
-0.3
(1)
____
0.7
V
4832tbl 05a
Rating
Commercial
& Industrial
Unit
V
TERM
(2)
Termnal Voltage
wth Respect to
GND
-0.5 to +4.6
V
T
BIAS
Temperature
Under Bias
-55 to +125
o
C
T
STG
Storage
Temperature
-65 to +150
o
C
I
OUT
DC Output Current
50
mA
4832 tbl 06
**/
*5'2
6
%72
NOTES:
1. V
IL >
-1.5V for pulse width less than 10 ns.
2. V
TERM
must not exceed V
DDQ
+ 125mV.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V
IL
(0V), and V
DDQX
for that port must be
supplied as indicated above.
**/
*5'2
6
!%!2
NOTES:
1. V
IL >
-1.5V for pulse width less than 10 ns.
2. V
TERM
must not exceed V
DDQ
+ 150mV.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V
IH
(3.3V), and V
DDQX
for that port must be
supplied as indicated above.
Symbol
Parameter
Mn.
Typ.
Max.
Unit
V
DD
Core Supply Voltage
3.15
3.3
3.45
V
V
DDQ
I/O Supply Voltage
(3)
3.15
3.3
3.45
V
V
SS
Ground
0
0
0
V
V
IH
Input High Voltage
(Address & Control Inputs)
(3)
2.0
____
V
DDQ
+ 150mV
(2)
V
V
IH
Input High Voltage - I/O
(3)
2.0
____
V
DDQ
+ 150mV
(2)
V
V
IL
Input LowVoltage
-0.3
(1)
____
0.8
V
4832 tbl 05b
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IDT70V3389S6PRF HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
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