參數(shù)資料
型號: IDT70V639S10BC
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM
中文描述: 128K X 18 DUAL-PORT SRAM, 10 ns, PBGA256
封裝: 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256
文件頁數(shù): 15/23頁
文件大小: 187K
代理商: IDT70V639S10BC
IDT70V639S
High-Speed 3.3V 128K x 18 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges
Preliminary
15
&.A.4'CC+,,
BUSY
8-
S
:3
)=
"
!6"
&.A.4'
BUSY
8-
S
:3
)
"
NOTES:
1. t
WH
must be met for both
BUSY
input (SLAVE) and output (MASTER).
2.
BUSY
is asserted on port "B" blocking R/
W
"B"
, until
BUSY
"B"
goes HIGH.
3. t
WB
is only for the 'slave' version.
NOTES:
1. To ensure that the earlier of the two ports wins. t
APS
is ignored for M/
S
= V
IL
(SLAVE).
2.
CE
L
=
CE
R
= V
IL
.
3.
OE
= V
IL
for the reading port.
4. If M/
S
= V
IL
(slave),
BUSY
is an input. Then for this example
BUSY
"A"
= V
IH
and
BUSY
"B"
input is shown above.
5. All timng is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite fromport "A".
5621 drw 12
t
DW
t
APS
ADDR
"A"
t
WC
DATA
OUT "B"
MATCH
t
WP
R/
W
"A"
DATA
IN "A"
ADDR
"B"
t
DH
VALID
(1)
MATCH
BUSY
"B"
t
BDA
VALID
t
BDD
t
DDD
(3)
t
WDD
t
BAA
.
5621 drw 13
R/
W
"A"
BUSY
"B"
t
WB
(3)
R/
W
"B"
t
WH
(1)
(2)
t
WP
相關(guān)PDF資料
PDF描述
IDT70V639S10BCI HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V639S10BF HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V639S10BFI HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V639S10PRF HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V639S10PRFI HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM
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IDT70V639S10PRF 功能描述:IC SRAM 2.25MBIT 10NS 128TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
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