參數(shù)資料
型號: IDT70V7319S133DDI
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
中文描述: 256K X 18 DUAL-PORT SRAM, 15 ns, PQFP144
封裝: TQFP-144
文件頁數(shù): 8/22頁
文件大?。?/td> 621K
代理商: IDT70V7319S133DDI
6.42
8
IDT70V7319S
High-Speed 256K x 18 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges
Capacitance
(1)
(T
A
= +25°C, F = 1.0MH
Z
) PQFP ONLY
Symbol
Parameter
Conditions
(2)
Max.
Unit
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(V
DD
= 3.3V ± 150mV)
NOTES:
1. At V
DD
< 2.0V leakages are undefined.
2. V
DDQ
is selectable (3.3V/2.5V) via OPT pins. Refer to p.5 for details.
Symbol
Parameter
Test Conditions
70V7319S
Unit
Mn.
Max.
|
LI
|
Input Leakage Current
(1)
V
DDQ
= Max., V
IN
= 0V to V
DDQ
___
10
μA
|
LO
|
Output Leakage Current
(1)
CE
0
= V
IH
or CE
1
= V
IL
, V
OUT
= 0V to V
DDQ
___
10
μA
V
OL
(3.3V)
Output LowVoltage
(2)
I
OL
= +4mA, V
DDQ
= Mn.
___
0.4
V
V
OH
(3.3V)
Output High Voltage
(2)
I
OH
= -4mA, V
DDQ
= Mn.
2.4
___
V
V
OL
(2.5V)
Output LowVoltage
(2)
I
OL
= +2mA, V
DDQ
= Mn.
___
0.4
V
V
OH
(2.5V)
Output High Voltage
(2)
I
OH
= -2mA, V
DDQ
= Mn.
2.0
___
V
5629 tbl 08
NOTES:
1. These parameters are determned by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from0V to 3V or from3V to 0V.
3. C
OUT
also references C
I/O
.
C
IN
Input Capacitance
V
IN
= 3dV
8
pF
C
OUT
(3)
Output Capacitance
V
OUT
= 3dV
10.5
pF
5629 tbl 07
相關(guān)PDF資料
PDF描述
IDT70V7319S200DDI HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7319S166BC HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7319S166BCI Photoelectric Sensor; Sensor Input Type:Optical; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensor Housing:Rectangular; Turn Off Time:1ms; Turn On Time:1ms; Range:1.5" focal point
IDT70V7319S166BF Photoelectric Sensor; Sensor Input Type:Optical; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensor Housing:Rectangular; Turn Off Time:1ms; Turn On Time:1ms; Range:12" using 90% reflectance white card
IDT70V7319S166BFI Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:24"; Sensor Housing:Rectangular; Turn Off Time:1ms; Turn On Time:1ms; Range:24"
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT70V7319S166BC 功能描述:IC SRAM 4MBIT 166MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7319S166BC8 功能描述:IC SRAM 4MBIT 166MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7319S166BCGI 功能描述:IC SRAM 4MBIT 166MHZ 256BGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7319S166BCI 功能描述:IC SRAM 4MBIT 166MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7319S166BCI8 功能描述:IC SRAM 4MBIT 166MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)