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參數(shù)資料
| 型號： | IDT70V7599S133BF |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | High Conductance Low Leakage Diode |
| 中文描述： | 128K X 36 DUAL-PORT SRAM, 15 ns, PBGA208 |
| 封裝： | 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-208 |
| 文件頁數(shù)： | 14/22頁 |
| 文件大?。?/td> | 489K |
| 代理商： | IDT70V7599S133BF |
6.42
IDT70V7599S
High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges
Timing Waveform of Port A Write to Pipelined Port B Read
(1,2,4)
CLK
"A"
R/
W
"A"
BANK ADDRESS
AND ADDRESS
"A"
DATA
IN"A"
CLK
"B"
R/
W
"B"
BANK ADDRESS
AND ADDRESS
"B"
DATA
OUT"B"
t
SW
t
HW
t
SA
t
HA
t
SD
t
HD
t
SW
t
HW
t
SA
t
HA
t
CD2
Dn
An
An
Dn
5626 drw 10
t
DC
t
CO
(3)
Timing Waveform with Port-to-Port Flow-Through Read
(1,2,4)
DATA
IN "A"
CLK
"B"
R/
W
"B"
BANK ADDRESS
ANDADDRESS
"A"
R/
W
"A"
CLK
"A"
BANK ADDRESS
ANDADDRESS
"B"
An
An
Dn
t
DC
DATA
OUT "B"
5626 drw 11
Dn
t
SW
t
HW
t
SA
t
HA
t
SD
t
HD
t
HW
t
HA
t
CD1
t
CO
(3)
t
DC
t
SA
t
SW
NOTES:
1.
CE
0
,
BE
n
, and
ADS
= V
IL
; CE
1
,
CNTEN
, and
REPEAT
= V
IH
.
2.
OE
= V
IL
for Port "B", which is being read from
OE
= V
IH
for Port "A", which is being written to.
3. If t
CO
< mnimumspecified, then operations fromboth ports are INVALID. If t
CO
≥
mnimum then data fromPort "B" read is available on first Port "B" clock cycle
(ie, time fromwrite to valid read on opposite port will be t
CO
+ t
CYC2
+ t
CD2
).
4. All timng is the same for Left and Right ports. Port "A" may be either Left or Right port. Port "B" is the opposite of Port "A"
NOTES:
1.
CE
0
,
BE
n, and
ADS
= V
IL
; CE
1
,
CNTEN
, and
REPEAT
= V
IH
.
2.
OE
= V
IL
for the Right Port, which is being read from
OE
= V
IH
for the Left Port, which is being written to.
3. If t
CO
< mnimumspecified, then operations fromboth ports are INVALID. If t
CO
≥
mnimum then data fromPort "B" read is available on first Port "B" clock cycle
(i.e., time fromwrite to valid read on opposite port will be t
CO
+ t
CD1
).
4. All timng is the same for both left and right ports. Port "A" may be either left or right port. Port "B" is the opposite of Port "A".
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PDF描述 |
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| IDT70V7599S133BFI | High Conductance Low Leakage Diode |
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| IDT70V7599S133DRI | HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT70V7599S133BF8 | 功能描述:IC SRAM 4MBIT 133MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7599S133BFI | 功能描述:IC SRAM 4MBIT 133MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7599S133BFI8 | 功能描述:IC SRAM 4MBIT 133MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7599S133DR | 功能描述:IC SRAM 4MBIT 133MHZ 208QFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7599S133DRI | 功能描述:IC SRAM 4MBIT 133MHZ 208QFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
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